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Tae Won Noh
Tae Won Noh
Center for Correlated Electron systems, Institute for Basic Science. Department of Physics
Verified email at cces.mygbiz.com - Homepage
Title
Cited by
Cited by
Year
Lanthanum-substituted bismuth titanate for use in non-volatile memories
BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo
Nature 401 (6754), 682-684, 1999
26941999
Novel J eff= 1/2 Mott state induced by relativistic spin-orbit coupling in Sr 2 IrO 4
BJ Kim, H Jin, SJ Moon, JY Kim, BG Park, CS Leem, J Yu, TW Noh, C Kim, ...
Physical review letters 101 (7), 076402, 2008
18322008
Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State <?format ?>in Transition Metal Oxides (, 2, and )
SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ...
Physical review letters 101 (22), 226402, 2008
5712008
Ferromagnetism Induced by Clustered Co in Co-Doped Anatase T i O 2 Thin Films
JY Kim, JH Park, BG Park, HJ Noh, SJ Oh, JS Yang, DH Kim, SD Bu, ...
Physical review letters 90 (1), 017401, 2003
5482003
Giant flexoelectric effect in ferroelectric epitaxial thin films
D Lee, A Yoon, SY Jang, JG Yoon, JS Chung, M Kim, JF Scott, TW Noh
Physical Review Letters 107 (5), 057602, 2011
5292011
Resistive switching phenomena: A review of statistical physics approaches
JS Lee, S Lee, TW Noh
Applied Physics Reviews 2 (3), 2015
4882015
Polarization Relaxation Induced by a Depolarization Field <?format ?>in Ultrathin Ferroelectric Capacitors
DJ Kim, JY Jo, YS Kim, YJ Chang, JS Lee, JG Yoon, TK Song, TW Noh
Physical review letters 95 (23), 237602, 2005
4132005
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
4082008
Experimental study of the three-dimensional ac conductivity and dielectric constant of a conductor-insulator composite near the percolation threshold
Y Song, TW Noh, SI Lee, JR Gaines
Physical Review B 33 (2), 904, 1986
3931986
Frequency Shifts of the Internal Phonon Modes in Mn
KH Kim, JY Gu, HS Choi, GW Park, TW Noh
Physical Review Letters 77 (9), 1877, 1996
3831996
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface
YW Yin, JD Burton, YM Kim, AY Borisevich, SJ Pennycook, SM Yang, ...
Nature materials 12 (5), 397-402, 2013
3502013
Mid-infrared properties of a VO 2 film near the metal-insulator transition
HS Choi, JS Ahn, JH Jung, TW Noh, DH Kim
Physical Review B 54 (7), 4621, 1996
3451996
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
D Lee, SH Baek, TH Kim, JG Yoon, CM Folkman, CB Eom, TW Noh
Physical Review B—Condensed Matter and Materials Physics 84 (12), 125305, 2011
3432011
Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures
L Wang, Q Feng, Y Kim, R Kim, KH Lee, SD Pollard, YJ Shin, H Zhou, ...
Nature materials 17 (12), 1087-1094, 2018
3272018
Domain switching kinetics in disordered ferroelectric thin films
JY Jo, HS Han, JG Yoon, TK Song, SH Kim, TW Noh
Physical review letters 99 (26), 267602, 2007
3222007
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
SH Chang, JS Lee, SC Chae, SB Lee, C Liu, B Kahng, DW Kim, TW Noh
Physical review letters 102 (2), 026801, 2009
3142009
Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals Crystals
CT Kuo, M Neumann, K Balamurugan, HJ Park, S Kang, HW Shiu, ...
Scientific reports 6 (1), 20904, 2016
2872016
Critical thickness of ultrathin ferroelectric BaTiO3 films
YS Kim, DH Kim, JD Kim, YJ Chang, TW Noh, JH Kong, K Char, YD Park, ...
Applied Physics Letters 86 (10), 2005
2862005
Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12
BH Park, SJ Hyun, SD Bu, TW Noh, J Lee, HD Kim, TH Kim, W Jo
Applied Physics Letters 74 (13), 1907-1909, 1999
2701999
Formation of Co nanoclusters in epitaxial thin films and their ferromagnetism
DH Kim, JS Yang, KW Lee, SD Bu, TW Noh, SJ Oh, YW Kim, JS Chung, ...
Applied Physics Letters 81 (13), 2421-2423, 2002
2682002
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