Nicolas Grandjean
Nicolas Grandjean
Institute of Physics, EPFL
Verified email at - Homepage
Cited by
Cited by
Room-temperature polariton lasing in semiconductor microcavities
S Christopoulos, GBH Von Högersthal, AJD Grundy, PG Lagoudakis, ...
Physical review letters 98 (12), 126405, 2007
Temperature quenching of photoluminescence intensities in undoped and doped GaN
M Leroux, N Grandjean, B Beaumont, G Nataf, F Semond, J Massies, ...
Journal of Applied Physics 86 (7), 3721-3728, 1999
Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga) N/GaN quantum wells
M Leroux, N Grandjean, M Laügt, J Massies, B Gil, P Lefebvre, ...
Physical Review B 58 (20), R13371, 1998
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ...
Journal of Physics D: Applied Physics 40 (20), 6328, 2007
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
N Grandjean, B Damilano, S Dalmasso, M Leroux, M Laügt, J Massies
Journal of applied physics 86 (7), 3714-3720, 1999
High electron mobility lattice-matched AlInN∕ GaN field-effect transistor heterostructures
M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean
Applied physics letters 89 (6), 2006
Room temperature polariton lasing in a GaN∕ AlGaN multiple quantum well microcavity
G Christmann, R Butté, E Feltin, JF Carlin, N Grandjean
Applied Physics Letters 93 (5), 2008
From visible to white light emission by GaN quantum dots on Si (111) substrate
B Damilano, N Grandjean, F Semond, J Massies, M Leroux
Applied physics letters 75 (7), 962-964, 1999
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
Spontaneous polarization buildup in a room-temperature polariton laser
JJ Baumberg, AV Kavokin, S Christopoulos, AJD Grundy, R Butté, ...
Physical Review Letters 101 (13), 136409, 2008
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
N Grandjean, J Massies, M Leroux
Applied physics letters 69 (14), 2071-2073, 1996
Barrier-width dependence of group-III nitrides quantum-well transition energies
M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald
Physical Review B 60 (3), 1496, 1999
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
Two-dimensional electron gas density in Al1− xInxN/AlN/GaN heterostructures (0.03≤ x≤ 0.23)
M Gonschorek, JF Carlin, E Feltin, MA Py, N Grandjean, V Darakchieva, ...
Journal of Applied Physics 103 (9), 2008
Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
F Semond, Y Cordier, N Grandjean, F Natali, B Damilano, S Vézian, ...
physica status solidi (a) 188 (2), 501-510, 2001
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
JF Carlin, C Zellweger, J Dorsaz, S Nicolay, G Christmann, E Feltin, ...
physica status solidi (b) 242 (11), 2326-2344, 2005
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells
P Lefebvre, J Allègre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ...
Physical Review B 59 (23), 15363, 1999
Epitaxial growth of highly strained InxGa1− xAs on GaAs (001): the role of surface diffusion length
N Grandjean, J Massies
Journal of crystal growth 134 (1-2), 51-62, 1993
Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
G Cosendey, A Castiglia, G Rossbach, JF Carlin, N Grandjean
Applied Physics Letters 101 (15), 2012
Testing the temperature limits of GaN-based HEMT devices
D Maier, M Alomari, N Grandjean, JF Carlin, MA Diforte-Poisson, C Dua, ...
IEEE Transactions on device and materials reliability 10 (4), 427-436, 2010
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