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Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ...
Physical review B 71 (20), 205325, 2005
Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy
GE Cirlin, VG Dubrovskii, YB Samsonenko, AD Bouravleuv, K Durose, ...
Physical Review B 82 (3), 035302, 2010
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov
Physical Review E 73 (2), 021603, 2006
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B 79 (20), 205316, 2009
Semiconductor nanowhiskers: synthesis, properties, and applications
VG Dubrovskii, GE Cirlin, VM Ustinov
Semiconductors 43, 1539-1584, 2009
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 2007
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ...
physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009
Kinetics of the initial stage of coherent island formation in heteroepitaxial systems
VG Dubrovskii, GE Cirlin, VM Ustinov
Physical Review B 68 (7), 075409, 2003
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin
Nanotechnology 17 (16), 4025, 2006
Anapoles in free-standing III–V nanodisks enhancing second-harmonic generation
M Timofeeva, L Lang, F Timpu, C Renaut, A Bouravleuv, I Shtrom, G Cirlin, ...
Nano letters 18 (6), 3695-3702, 2018
Role of nonlinear effects in nanowire growth and crystal phase
VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ...
Physical Review B 80 (20), 205305, 2009
Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
GE Cirlin, GM Guryanov, AO Golubok, SY Tipissev, NN Ledentsov, ...
Applied physics letters 67 (1), 97-99, 1995
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111)
L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand
Nanotechnology 19 (15), 155704, 2008
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature
JC Harmand, M Tchernycheva, G Patriarche, L Travers, F Glas, G Cirlin
Journal of Crystal Growth 301, 853-856, 2007
Shape modification of III-V nanowires: The role of nucleation on sidewalls
VG Dubrovskii, NV Sibirev, GE Cirlin, M Tchernycheva, JC Harmand, ...
Physical review E 77 (3), 031606, 2008
Growth of GaAs nanoscale whiskers by magnetron sputtering deposition
VG Dubrovskii, IP Soshnikov, NV Sibirev, GE Cirlin, VM Ustinov
Journal of crystal growth 289 (1), 31-36, 2006
Formation of InAs quantum dots on a silicon (100) surface
GE Cirlin, VG Dubrovskii, VN Petrov, NK Polyakov, NP Korneeva, ...
Semiconductor science and technology 13 (11), 1262, 1998
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