Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching P Papet, O Nichiporuk, A Kaminski, Y Rozier, J Kraiem, JF Lelievre, ... Solar Energy Materials and Solar Cells 90 (15), 2319-2328, 2006 | 412 | 2006 |
Study of the composition of hydrogenated silicon nitride SiNx: H for efficient surface and bulk passivation of silicon JF Lelièvre, E Fourmond, A Kaminski, O Palais, D Ballutaud, M Lemiti Solar Energy Materials and Solar Cells 93 (8), 1281-1289, 2009 | 214 | 2009 |
Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation J Dupuis, E Fourmond, JF Lelièvre, D Ballutaud, M Lemiti Thin Solid Films 516 (20), 6954-6958, 2008 | 94 | 2008 |
Acceptable contamination levels in solar grade silicon: From feedstock to solar cell J Hofstetter, JF Lelièvre, C Del Cañizo, A Luque Materials Science and Engineering: B 159, 299-304, 2009 | 90 | 2009 |
Impurity‐to‐efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution J Hofstetter, DP Fenning, MI Bertoni, JF Lelièvre, C Cañizo1, T Buonassisi Progress in photovoltaics: Research and applications 19 (4), 487-497, 2011 | 62 | 2011 |
Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling DP Fenning, J Hofstetter, MI Bertoni, S Hudelson, M Rinio, JF Lelievre, ... Applied Physics Letters 98 (16), 2011 | 52 | 2011 |
Elaboration de SiNx: H par PECVD: optimisation des propriétés optiques, passivantes et structurales pour applications photovoltaïques JF Lelièvre Institut National des Sciences Appliquées de Lyon, 2007 | 50 | 2007 |
Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells JF Lelièvre, B Kafle, P Saint‐Cast, P Brunet, R Magnan, E Hernandez, ... Progress in Photovoltaics: Research and Applications 27 (11), 1007-1019, 2019 | 48 | 2019 |
About the origin of low wafer performance and crystal defect generation on seed‐cast growth of industrial mono‐like silicon ingots I Guerrero, V Parra, T Carballo, A Black, M Miranda, D Cancillo, ... Progress in Photovoltaics: Research and Applications 22 (8), 923-932, 2014 | 48 | 2014 |
Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing M Lipiński, A Kaminski, JF Lelièvre, M Lemiti, E Fourmond, P Zięba physica status solidi c 4 (4), 1566-1569, 2007 | 39 | 2007 |
Correlation of optical and photoluminescence properties in amorphous SiNx: H thin films deposited by PECVD or UVCVD JF Lelievre, J De la Torre, A Kaminski, G Bremond, M Lemiti, ... Thin Solid Films 511, 103-107, 2006 | 36 | 2006 |
Dissolution and gettering of iron during contact co-firing JF Lelievre, J Hofstetter, A Peral, I Hoces, F Recart, C Del Cañizo Energy Procedia 8, 257-262, 2011 | 35 | 2011 |
Atmospheric Pressure Radio‐Frequency DBD Deposition of Dense Silicon Dioxide Thin Film R Bazinette, J Paillol, JF Lelièvre, F Massines Plasma Processes and Polymers 13 (10), 1015-1024, 2016 | 29 | 2016 |
Desert label development for improved reliability and durability of photovoltaic modules in harsh desert conditions JF Lelièvre, R Couderc, N Pinochet, L Sicot, D Munoz, R Kopecek, ... Solar Energy Materials and Solar Cells 236, 111508, 2022 | 22 | 2022 |
Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics F Massines, J Silva, JF Lelièvre, R Bazinette, J Vallade, P Lecouvreur, ... Plasma Processes and Polymers 13 (1), 170-183, 2016 | 22 | 2016 |
Cannizo and C, Luque L 2009 Mater J Hofstetter, JF Lelièvre Sci. Eng. B 159, 299, 0 | 20 | |
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion A Fave, JF Lelièvre, T Gallet, Q Su, M Lemiti Energy Procedia 124, 577-583, 2017 | 18 | 2017 |
Influence of the discharge mode on the optical and passivation properties of SiNx: H deposited by PECVD at atmospheric pressure R Bazinette, JF Lelièvre, L Gaudy, F Massines Energy Procedia 92, 309-316, 2016 | 17 | 2016 |
Impact of a metal–organic vapor phase epitaxy environment on silicon substrates for III–V-on-Si multijunction solar cells E García-Tabarés, I García, JF Lelievre, I Rey-Stolle Japanese Journal of Applied Physics 51 (10S), 10ND05, 2012 | 16 | 2012 |
Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon J Hofstetter, DP Fenning, JF Lelièvre, C del Cañizo, T Buonassisi physica status solidi (a) 209 (10), 1861-1865, 2012 | 15 | 2012 |