Michael Povolotskyi
Michael Povolotskyi
Jacobs Technologies
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NEMO5: A parallel multiscale nanoelectronics modeling tool
S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck
IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011
Efficient and realistic device modeling from atomic detail to the nanoscale
JE Fonseca, T Kubis, M Povolotskyi, B Novakovic, A Ajoy, G Hegde, ...
Journal of Computational Electronics 12 (4), 592-600, 2013
Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution
YP Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck
Physical Review B 92 (8), 085301, 2015
Transferable tight-binding model for strained group IV and III-V materials and heterostructures
Y Tan, M Povolotskyi, T Kubis, TB Boykin, G Klimeck
Physical Review B 94 (4), 045311, 2016
Carrier-confinement effects in nanocolumnar quantum disks grown by molecular-beam epitaxy
J Ristić, C Rivera, E Calleja, S Fernández-Garrido, M Povoloskyi, ...
Physical Review B—Condensed Matter and Materials Physics 72 (8), 085330, 2005
Engineering Nanowire n-MOSFETs at
SR Mehrotra, SG Kim, T Kubis, M Povolotskyi, MS Lundstrom, G Klimeck
IEEE Transactions on Electron Devices 60 (7), 2171-2177, 2013
Electronic and transport properties of silicon nanowires
F Sacconi, MP Persson, M Povolotskyi, L Latessa, A Pecchia, A Gagliardi, ...
Journal of Computational Electronics 6, 329-333, 2007
Elasticity theory of pseudomorphic heterostructures grown on substrates of arbitrary thickness
M Povolotskyi, A Di Carlo
Journal of Applied Physics 100 (6), 2006
TiberCAD: Towards multiscale simulation of optoelectronic devices
M Auf der Maur, M Povolotskyi, F Sacconi, A Pecchia, G Romano, ...
Optical and quantum electronics 40, 1077-1083, 2008
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a capping layer
O Schumann, S Birner, M Baudach, L Geelhaar, H Eisele, L Ivanova, ...
Physical Review B—Condensed Matter and Materials Physics 71 (24), 245316, 2005
Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys
SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ...
IEEE electron device letters 34 (9), 1196-1198, 2013
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin
Journal of Computational Electronics 12, 56-60, 2013
Design principles for HgTe based topological insulator devices
P Sengupta, T Kubis, Y Tan, M Povolotskyi, G Klimeck
Journal of Applied Physics 114 (4), 2013
Enhanced valence force field model for the lattice properties of gallium arsenide
S Steiger, M Salmani-Jelodar, D Areshkin, A Paul, T Kubis, M Povolotskyi, ...
Physical Review B—Condensed Matter and Materials Physics 84 (15), 155204, 2011
High-Current Tunneling FETs With ( 1\bar {1}0 ) Orientation and a Channel Heterojunction
GKMJWR P. Long, J. Z. Huang, M. Povolotskyi
IEEE Electron Device Letters 37 (3), 345-348, 2016
Incoherent transport in NEMO5: realistic and efficient scattering on phonons
J Charles, P Sarangapani, R Golizadeh-Mojarad, R Andrawis, D Lemus, ...
Journal of Computational Electronics 15, 1123-1129, 2016
MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films
T Shen, D Valencia, Q Wang, KC Wang, M Povolotskyi, MJ Kim, ...
ACS applied materials & interfaces 11 (31), 28345-28351, 2019
Grain-boundary resistance in copper interconnects: from an atomistic model to a neural network
D Valencia, E Wilson, Z Jiang, GA Valencia-Zapata, KC Wang, G Klimeck, ...
Physical review applied 9 (4), 044005, 2018
Control of interlayer physics in 2H transition metal dichalcogenides
KC Wang, TK Stanev, D Valencia, J Charles, A Henning, VK Sangwan, ...
Journal of Applied Physics 122 (22), 2017
Strain effects in freestanding three‐dimensional nitride nanostructures
M Povolotskyi, M Auf der Maur, A Di Carlo
physica status solidi (c) 2 (11), 3891-3894, 2005
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