A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ... Materials 13 (13), 2968, 2020 | 44 | 2020 |
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ... Applied Physics Letters 115 (18), 2019 | 34 | 2019 |
Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ... ACS applied materials & interfaces 10 (51), 44825-44833, 2018 | 33 | 2018 |
Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ... ACS applied materials & interfaces 10 (16), 14116-14123, 2018 | 33 | 2018 |
Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ... Applied Physics Letters 119 (24), 2021 | 26 | 2021 |
Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ... Materials 13 (15), 3387, 2020 | 20 | 2020 |
Inductively coupled plasma reactive ion etching of magnetic tunnel junction stacks in a CH3COOH/Ar gas AA Garay, JH Choi, SM Hwang, CW Chung ECS Solid State Letters 4 (10), P77, 2015 | 18 | 2015 |
High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture SM Hwang, AA Garay, WI Lee, CW Chung Thin Solid Films 587, 28-33, 2015 | 14 | 2015 |
Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture AA Garay, SM Hwang, JH Choi, BC Min, CW Chung Vacuum 119, 151-158, 2015 | 13 | 2015 |
Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ... ACS Applied Nano Materials 4 (3), 2558-2564, 2021 | 12 | 2021 |
Inductive couple plasma reactive ion etching characteristics of TiO2 thin films AA Garay, SM Hwang, CW Chung Thin Solid Films 587, 20-27, 2015 | 11 | 2015 |
Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma AA Garay, SM Hwang, CW Chung Vacuum 111, 19-24, 2015 | 11 | 2015 |
High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ... Journal of Materials Chemistry C 8 (37), 13033-13039, 2020 | 10 | 2020 |
Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma SM Hwang, A Garay, IH Lee, CW Chung Korean Journal of Chemical Engineering 31, 2274-2279, 2014 | 10 | 2014 |
Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant YC Jung, JH Kim, H Hernandez-Arriaga, J Mohan, SM Hwang, DN Le, ... Applied Physics Letters 121 (22), 2022 | 9 | 2022 |
Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas IH Lee, TY Lee, SM Hwang, CW Chung Vacuum 101, 394-398, 2014 | 9 | 2014 |
Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications DN Le, T Park, SM Hwang, JH Kim, YC Jung, N Tiwale, A Subramanian, ... Japanese Journal of Applied Physics 62 (SG), SG0812, 2023 | 8 | 2023 |
Chemical reactions induced by low-energy electron exposure on a novel inorganic-organic hybrid dry EUV photoresist deposited by molecular atomic layer deposition (MALD) DN Le, SM Hwang, J Woo, S Choi, T Park, JF Veyan, N Tiwale, ... International Conference on Extreme Ultraviolet Lithography 2022 12292, 27-32, 2022 | 8 | 2022 |
Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ... ACS Applied Electronic Materials 4 (4), 1405-1414, 2022 | 8 | 2022 |
Ozone based high-temperature atomic layer deposition of SiO2 thin films SM Hwang, Z Qin, HS Kim, A Ravichandran, YC Jung, SJ Kim, J Ahn, ... Japanese Journal of Applied Physics 59 (SI), SIIG05, 2020 | 7 | 2020 |