| SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ... 2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010 | 309 | 2010 |
| A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps H Rücker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ... IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010 | 224 | 2010 |
| Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz S Lischke, A Peczek, JS Morgan, K Sun, D Steckler, Y Yamamoto, ... Nature Photonics 15 (12), 925-931, 2021 | 205 | 2021 |
| Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack Solid-State Electronics 60 (1), 2-6, 2011 | 177 | 2011 |
| Novel collector design for high-speed SiGe: C HBTs B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ... Digest. International Electron Devices Meeting,, 775-778, 2002 | 127 | 2002 |
| Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014 | 124 | 2014 |
| Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013 | 117 | 2013 |
| SiGe BiCMOS technology with 3.0 ps gate delay H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ... 2007 IEEE International Electron Devices Meeting, 651-654, 2007 | 102 | 2007 |
| Graphene grown on Ge (0 0 1) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ... Carbon 75, 104-112, 2014 | 80 | 2014 |
| Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ... ACS applied materials & interfaces 8 (49), 33786-33793, 2016 | 75 | 2016 |
| CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes E Talamas Simola, V Kiyek, A Ballabio, V Schlykow, J Frigerio, ... ACS photonics 8 (7), 2166-2173, 2021 | 74 | 2021 |
| Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology D Knoll, S Lischke, L Zimmermann, B Heinemann, D Micusik, ... Optical Fiber Communication Conference, Th4C. 4, 2014 | 59 | 2014 |
| A complementary BiCMOS technology with high speed npn and pnp SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, O Fursenko, ... IEEE International Electron Devices Meeting 2003, 5.2. 1-5.2. 4, 2003 | 57 | 2003 |
| A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module D Knoll, KE Ehwald, B Heinemann, A Fox, K Blum, H Rucker, ... Digest. International Electron Devices Meeting,, 783-786, 2002 | 57 | 2002 |
| A low-parasitic collector construction for high-speed SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, T Grabolla, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 53 | 2004 |
| BiCMOS silicon photonics platform L Zimmermann, D Knoll, M Kroh, S Lischke, D Petousi, G Winzer, ... Optical Fiber Communication Conference, Th4E. 5, 2015 | 52 | 2015 |
| Low threading dislocation Ge on Si by combining deposition and etching Y Yamamoto, G Kozlowski, P Zaumseil, B Tillack Thin Solid Films 520 (8), 3216-3221, 2012 | 49 | 2012 |
| SiGe HBT module with 2.5 ps gate delay A Fox, B Heinemann, R Barth, D Bolze, J Drews, U Haak, D Knoll, B Kuck, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 46 | 2008 |
| Atomic layer processing for doping of SiGe B Tillack, Y Yamamoto, D Bolze, B Heinemann, H Rücker, D Knoll, ... Thin Solid Films 508 (1-2), 279-283, 2006 | 42 | 2006 |
| Molecular beam growth of micrometer-size graphene on mica G Lippert, J Dabrowski, Y Yamamoto, F Herziger, J Maultzsch, ... Carbon 52, 40-48, 2013 | 40 | 2013 |
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinVerified email at ikz-berlin.de
