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Thomas Kure
Thomas Kure
Institut für Festkörperphysik, Technische Universität Berlin
Verified email at TU-Berlin.de - Homepage
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Cited by
Year
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
1042016
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
742012
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ...
Applied Physics Letters 113 (7), 2018
722018
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ...
Journal of Applied Physics 110 (9), 2011
642011
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 2013
552013
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
542015
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ...
Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016
462016
Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots
G Hönig, S Rodt, G Callsen, IA Ostapenko, T Kure, A Schliwa, C Kindel, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045309, 2013
362013
Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities
M Bürger, G Callsen, T Kure, A Hoffmann, A Pawlis, D Reuter, DJ As
Applied Physics Letters 103 (2), 2013
342013
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ...
Physical Review B 92 (23), 235439, 2015
272015
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
G Callsen, MR Wagner, JS Reparaz, F Nippert, T Kure, S Kalinowski, ...
Physical Review B 90 (20), 205206, 2014
252014
Intrinsic electronic properties of high-quality wurtzite InN
H Eisele, J Schuppang, M Schnedler, M Duchamp, C Nenstiel, V Portz, ...
Physical Review B 94 (24), 245201, 2016
122016
Excited states of neutral donor bound excitons in GaN
G Callsen, T Kure, MR Wagner, R Butté, N Grandjean
Journal of Applied Physics 123 (21), 2018
102018
Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ...
Journal of Applied Physics 119 (21), 2016
102016
Electronic excitations stabilized by a degenerate electron gas in semiconductors
C Nenstiel, G Callsen, F Nippert, T Kure, S Schlichting, N Jankowski, ...
Communications Physics 1 (1), 38, 2018
82018
Non‐polar GaN quantum dots integrated into high quality cubic AlN microdisks
M Bürger, G Callsen, T Kure, A Hoffmann, A Pawlis, D Reuter, DJ As
physica status solidi (c) 11 (3‐4), 790-793, 2014
62014
Triple group-V donors in ZnO
M Hegde, F Mohammadbeigi, T Kure, E Senthil Kumar, MR Wagner, ...
Journal of Applied Physics 127 (7), 2020
42020
Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires
F Mohammadbeigi, T Kure, G Callsen, ES Kumar, MR Wagner, ...
Semiconductor Science and Technology 32 (4), 045017, 2017
12017
Bound excitons and exciton-polaritons in Zinc Oxide
T Kure
PQDT-Global, 2022
2022
Carrier localization in InGaN-based light-emitting diodes (Conference Presentation)
F Nippert, SY Karpov, MR Wagner, G Callsen, T Kure, B Galler, ...
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2018
2018
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