Thomas Kure
Thomas Kure
Institut für Festkörperphysik, Technische Universität Berlin
Verified email at - Homepage
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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ...
Applied Physics Letters 113 (7), 2018
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ...
Journal of Applied Physics 110 (9), 2011
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 2013
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ...
Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016
Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots
G Hönig, S Rodt, G Callsen, IA Ostapenko, T Kure, A Schliwa, C Kindel, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045309, 2013
Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities
M Bürger, G Callsen, T Kure, A Hoffmann, A Pawlis, D Reuter, DJ As
Applied Physics Letters 103 (2), 2013
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ...
Physical Review B 92 (23), 235439, 2015
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
G Callsen, MR Wagner, JS Reparaz, F Nippert, T Kure, S Kalinowski, ...
Physical Review B 90 (20), 205206, 2014
Intrinsic electronic properties of high-quality wurtzite InN
H Eisele, J Schuppang, M Schnedler, M Duchamp, C Nenstiel, V Portz, ...
Physical Review B 94 (24), 245201, 2016
Excited states of neutral donor bound excitons in GaN
G Callsen, T Kure, MR Wagner, R Butté, N Grandjean
Journal of Applied Physics 123 (21), 2018
Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ...
Journal of Applied Physics 119 (21), 2016
Electronic excitations stabilized by a degenerate electron gas in semiconductors
C Nenstiel, G Callsen, F Nippert, T Kure, S Schlichting, N Jankowski, ...
Communications Physics 1 (1), 38, 2018
Non‐polar GaN quantum dots integrated into high quality cubic AlN microdisks
M Bürger, G Callsen, T Kure, A Hoffmann, A Pawlis, D Reuter, DJ As
physica status solidi (c) 11 (3‐4), 790-793, 2014
Triple group-V donors in ZnO
M Hegde, F Mohammadbeigi, T Kure, E Senthil Kumar, MR Wagner, ...
Journal of Applied Physics 127 (7), 2020
Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires
F Mohammadbeigi, T Kure, G Callsen, ES Kumar, MR Wagner, ...
Semiconductor Science and Technology 32 (4), 045017, 2017
Bound excitons and exciton-polaritons in Zinc Oxide
T Kure
PQDT-Global, 2022
Carrier localization in InGaN-based light-emitting diodes (Conference Presentation)
F Nippert, SY Karpov, MR Wagner, G Callsen, T Kure, B Galler, ...
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2018
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