Christian Nenstiel
Christian Nenstiel
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Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 2011
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
Ge doped GaN with controllable high carrier concentration for plasmonic applications
R Kirste, MP Hoffmann, E Sachet, M Bobea, Z Bryan, I Bryan, C Nenstiel, ...
Applied Physics Letters 103 (24), 2013
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 2013
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ...
Journal of Applied Physics 113 (20), 2013
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ...
Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016
Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods
S Anantachaisilp, SM Smith, C Ton-That, S Pornsuwan, AR Moon, ...
Journal of Luminescence 168, 20-25, 2015
Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ...
Physical Review B 92 (23), 235439, 2015
Breakdown of far-field Raman selection rules by light–plasmon coupling demonstrated by tip-enhanced Raman scattering
E Poliani, MR Wagner, A Vierck, F Herziger, C Nenstiel, F Gannott, ...
The Journal of Physical Chemistry Letters 8 (22), 5462-5471, 2017
Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy
MS Mohajerani, S Khachadorian, T Schimpke, C Nenstiel, J Hartmann, ...
Applied Physics Letters 108 (9), 2016
Identification of a donor-related recombination channel in ZnO thin films
M Brandt, H von Wenckstern, G Benndorf, M Lange, CP Dietrich, ...
Physical Review B—Condensed Matter and Materials Physics 81 (7), 073306, 2010
Shallow carrier traps in hydrothermal ZnO crystals
C Ton-That, LLC Lem, MR Phillips, F Reisdorffer, J Mevellec, TP Nguyen, ...
New Journal of Physics 16 (8), 083040, 2014
Charge state switching of Cu acceptors in ZnO nanorods
MA Rahman, MT Westerhausen, C Nenstiel, S Choi, A Hoffmann, ...
Applied Physics Letters 110 (12), 2017
Intrinsic electronic properties of high-quality wurtzite InN
H Eisele, J Schuppang, M Schnedler, M Duchamp, C Nenstiel, V Portz, ...
Physical Review B 94 (24), 245201, 2016
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
S Choi, DJ Rogers, EV Sandana, P Bove, FH Teherani, C Nenstiel, ...
Scientific reports 7 (1), 7457, 2017
Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ...
Journal of Applied Physics 119 (21), 2016
Electronic excitations stabilized by a degenerate electron gas in semiconductors
C Nenstiel, G Callsen, F Nippert, T Kure, S Schlichting, N Jankowski, ...
Communications Physics 1 (1), 38, 2018
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