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Maximilian Wolfgang Feil
Maximilian Wolfgang Feil
TU Wien - Institute for Microelectronics, Infineon Technologies
Verified email at infineon.com
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Cited by
Cited by
Year
Spontaneous crystallization of perovskite nanocrystals in nonpolar organic solvents: a versatile approach for their shape‐controlled synthesis
H Huang, Y Li, Y Tong, EP Yao, MW Feil, AF Richter, M Döblinger, ...
Angewandte Chemie International Edition 58 (46), 16558-16562, 2019
1032019
Templated‐Assembly of CsPbBr3 Perovskite Nanocrystals into 2D Photonic Supercrystals with Amplified Spontaneous Emission
D Vila‐Liarte, MW Feil, A Manzi, JL Garcia‐Pomar, H Huang, M Döblinger, ...
Angewandte Chemie International Edition 59 (40), 17750-17756, 2020
822020
Growth of Perovskite CsPbBr3 Nanocrystals and Their Formed Superstructures Revealed by In Situ Spectroscopy
H Huang, MW Feil, S Fuchs, T Debnath, AF Richter, Y Tong, L Wu, ...
Chemistry of Materials 32 (20), 8877-8884, 2020
402020
Physical modeling of charge trapping in 4H-SiC DMOSFET technologies
C Schleich, D Waldhoer, K Waschneck, MW Feil, H Reisinger, T Grasser, ...
IEEE Transactions on Electron Devices 68 (8), 4016-4021, 2021
312021
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation
P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, T Aichinger
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
312021
Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation
P Salmen, MW Feil, K Waschneck, H Reisinger, G Rescher, I Voss, ...
Microelectronics reliability 135, 114575, 2022
202022
The impact of interfacial charge trapping on the reproducibility of measurements of silicon carbide MOSFET device parameters
MW Feil, A Huerner, K Puschkarsky, C Schleich, T Aichinger, W Gustin, ...
Crystals 10 (12), 1143, 2020
122020
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs
MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, P Salmen, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2023
112023
On the physical meaning of single-value activation energies for BTI in Si and SiC MOSFET devices
MW Feil, K Puschkarsky, W Gustin, H Reisinger, T Grasser
IEEE Transactions on Electron Devices 68 (1), 236-243, 2020
112020
On the frequency dependence of the gate switching instability in silicon carbide MOSFETs
MW Feil, K Waschneck, H Reisinger, P Salmen, G Rescher, T Aichinger, ...
Materials Science Forum 1092, 109-117, 2023
82023
Assessing, controlling and understanding parameter variations of SiC power MOSFETs in switching operation
T Aichinger, MW Feil, P Salmen
Key Engineering Materials 947, 69-75, 2023
82023
Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors
MW Feil, H Reisinger, A Kabakow, T Aichinger, C Schleich, A Vasilev, ...
Communications Engineering 2 (1), 5, 2023
82023
Optical emission correlated to bias temperature instability in SiC MOSFETs
MW Feil, H Reisinger, A Kabakow, T Aichinger, W Gustin, T Grasser
2022 IEEE International Reliability Physics Symposium (IRPS), 3B. 1-1-3B. 1-9, 2022
82022
Influence of the threshold-voltage hysteresis on the switching properties of SiC MOSFETs
A Huerner, P Sochor, M Feil, R Elpelt
PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021
72021
Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface Defects
M Weger, D Biermeier, MW Feil, J Cottom, M Bockstedte, G Pobegen
Materials Science Forum 1091, 15-23, 2023
32023
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations
A Vasilev, MW Feil, C Schleich, B Stampfer, G Rzepa, G Pobegen, ...
Materials Science Forum 1090, 119-126, 2023
22023
Influence of turn-off gate-voltage undershoots on the turn-on behavior of SiC MOSFETs
A Huerner, P Sochor, Q Sun, MW Feil, R Elpelt
PCIM Europe 2022; International Exhibition and Conference for Power …, 2022
22022
Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental
MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, S Prigann, ...
IEEE Transactions on Electron Devices, 2024
12024
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs
T Grasser, M Feil, K Waschneck, H Reisinger, J Berens, D Waldhoer, ...
2024 IEEE International Reliability Physics Symposium (IRPS), 3B. 1-1-3B. 1-7, 2024
12024
Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs
MW Feil, K Waschneck, H Reisinger, J Berens, T Aichinger, S Prigann, ...
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-9, 2023
12023
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