Roman Talalaev
Roman Talalaev
STR Group
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GaN evaporation in molecular-beam epitaxy environment
N Grandjean, J Massies, F Semond, SY Karpov, RA Talalaev
Applied Physics Letters 74 (13), 1854-1856, 1999
Effect of V/III ratio in AlN and AlGaN MOVPE
AV Lobanova, KM Mazaev, RA Talalaev, M Leys, S Boeykens, K Cheng, ...
Journal of crystal growth 287 (2), 601-604, 2006
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
M Dauelsberg, C Martin, H Protzmann, AR Boyd, EJ Thrush, J Käppeler, ...
Journal of crystal growth 298, 418-424, 2007
Hydrogen effects in III-nitride MOVPE
EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ...
Journal of Crystal Growth 310 (23), 4862-4866, 2008
Novel approach to simulation of group-III nitrides growth by MOVPE
SY Karpov, VG Prokofyev, EV Yakovlev, RA Talalaev, YN Makarov
MRS Internet Journal of Nitride Semiconductor Research 4, 1-7, 1999
On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds
RA Talalaev, EV Yakovlev, SY Karpov, YN Makarov
Journal of crystal growth 230 (1-2), 232-238, 2001
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
AV Kondratyev, RA Talalaev, WV Lundin, AV Sakharov, AV Tsatsul’nikov, ...
Journal of crystal growth 272 (1-4), 420-425, 2004
Growth conditions and surface morphology of AlN MOVPE
AV Lobanova, EV Yakovlev, RA Talalaev, SB Thapa, F Scholz
Journal of Crystal Growth 310 (23), 4935-4938, 2008
Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy
SY Karpov, RA Talalaev, YN Makarov, N Grandjean, J Massies, ...
Surface science 450 (3), 191-203, 2000
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
C Martin, M Dauelsberg, H Protzmann, AR Boyd, EJ Thrush, M Heuken, ...
Journal of crystal growth 303 (1), 318-322, 2007
Analysis of vaporization kinetics of group-III nitrides
MV Averyanova, IN Przhevalskii, SY Karpov, YN Makarov, MS Ramm, ...
Materials Science and Engineering: B 43 (1-3), 167-171, 1997
Theoretical model for analysis and optimization of group III-nitrides growth by molecular beam epitaxy
MV Averyanova, SY Karpov, YN Makarov, IN Przhevalskii, MS Ramm, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1996
Analysis of silicon carbide growth by sublimation sandwich method
SY Karpov, YN Makarov, EN Mokhov, MG Ramm, MS Ramm, ...
Journal of crystal growth 173 (3-4), 408-416, 1997
Indium segregation kinetics in MOVPE of InGaN‐based heterostructures
SY Karpov, RA Talalaev, IY Evstratov, YN Makarov
physica status solidi (a) 192 (2), 417-423, 2002
Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach
M Dauelsberg, D Brien, R Püsche, O Schön, EV Yakovlev, AS Segal, ...
Journal of crystal growth 315 (1), 224-228, 2011
High growth rate MOVPE of Al (Ga) N in planetary reactor
WV Lundin, AE Nikolaev, MA Yagovkina, PN Brunkov, MM Rozhavskaya, ...
Journal of crystal growth 352 (1), 209-213, 2012
Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor
EV Yakovlev, RA Talalaev, YN Makarov, BS Yavich, WN Wang
Journal of crystal growth 261 (2-3), 182-189, 2004
On the possible origins of low indium incorporation during MOVPE of InGaN
RA Talalaev, EV Yakovlev, SY Karpov, IY Estratov, AN Vorobev, ...
physica status solidi (a) 176 (1), 253-256, 1999
On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors
M Dauelsberg, D Brien, H Rauf, F Reiher, J Baumgartl, O Häberlen, ...
Journal of crystal growth 393, 103-107, 2014
Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates
T Kunz, I Burkert, R Auer, AA Lovtsus, RA Talalaev, YN Makarov
Journal of crystal growth 310 (6), 1112-1117, 2008
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