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Nikolay Cherkashin
Nikolay Cherkashin
Other namesN.A. Cherkashin, N. Cherkashin
Chargé de recherche, CEMES-CNRS
Verified email at cemes.fr - Homepage
Title
Cited by
Cited by
Year
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
1622003
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation
C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
1522004
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
1412003
Epitaxial growth of Ge thick layers on nominal and 6 off Si (0 0 1); Ge surface passivation by Si
JM Hartmann, A Abbadie, N Cherkashin, H Grampeix, L Clavelier
Semiconductor Science and Technology 24 (5), 055002, 2009
1172009
Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS
S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
1032008
Clusters formation in ultralow-energy high-dose boron-implanted silicon
F Cristiano, X Hebras, N Cherkashin, A Claverie, W Lerch, S Paul
Applied physics letters 83 (26), 5407-5409, 2003
792003
Amorphization, recrystallization and end of range defects in germanium
A Claverie, S Koffel, N Cherkashin, G Benassayag, P Scheiblin
Thin Solid Films 518 (9), 2307-2313, 2010
682010
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
682004
Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)
S Personnic, KK Bourdelle, F Letertre, A Tauzin, N Cherkashin, A Claverie, ...
Journal of Applied Physics 103 (2), 2008
662008
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
662006
Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
T Müller, KH Heinig, W Möller, C Bonafos, H Coffin, N Cherkashin, ...
Applied physics letters 85 (12), 2373-2375, 2004
622004
Ion beam induced defects in crystalline silicon
F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
592004
Modeling and experiments on diffusion and activation of phosphorus in germanium
P Tsouroutas, D Tsoukalas, I Zergioti, N Cherkashin, A Claverie
Journal of Applied Physics 105 (9), 2009
582009
Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS
O Weber, Y Bogumilowicz, T Ernst, JM Hartmann, F Ducroquet, F Andrieu, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
562005
End of range defects in Ge
S Koffel, N Cherkashin, F Houdellier, MJ Hytch, G Benassayag, ...
Journal of Applied Physics 105 (12), 2009
542009
High germanium content SiGe virtual substrates grown at high temperatures
Y Bogumilowicz, JM Hartmann, F Laugier, G Rolland, T Billon, ...
Journal of crystal growth 283 (3-4), 346-355, 2005
532005
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ...
Nano letters 14 (4), 1769-1775, 2014
482014
X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy
VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ...
journal of Applied Physics 115 (7), 2014
482014
Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
F Cristiano, N Cherkashin, P Calvo, Y Lamrani, X Hebras, A Claverie, ...
Materials Science and Engineering: B 114, 174-179, 2004
472004
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
462005
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