| Percolation models for gate oxide breakdown JH Stathis Journal of applied physics 86 (10), 5757-5766, 1999 | 639 | 1999 |
| Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung Journal of applied physics 98 (12), 2005 | 558 | 2005 |
| Luminescence degradation in porous silicon MA Tischler, RT Collins, JH Stathis, JC Tsang Applied Physics Letters 60 (5), 639-641, 1992 | 536 | 1992 |
| The negative bias temperature instability in MOS devices: A review JH Stathis, S Zafar Microelectronics Reliability 46 (2-4), 270-286, 2006 | 508 | 2006 |
| Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen E Cartier, JH Stathis, DA Buchanan Applied physics letters 63 (11), 1510-1512, 1993 | 486 | 1993 |
| Reliability projection for ultra-thin oxides at low voltage JH Stathis, DJ DiMaria International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 462 | 1998 |
| Hydrogen electrochemistry and stress-induced leakage current in silica PE Blöchl, JH Stathis Physical review letters 83 (2), 372, 1999 | 352 | 1999 |
| Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits JH Stathis IEEE Transactions on device and materials reliability 1 (1), 43-59, 2001 | 335 | 2001 |
| Reliability limits for the gate insulator in CMOS technology JH Stathis IBM Journal of Research and Development 46 (2.3), 265-286, 2002 | 313 | 2002 |
| A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006 | 293 | 2006 |
| Time-resolved photoluminescence in amorphous silicon dioxide JH Stathis, MA Kastner Physical Review B 35 (6), 2972, 1987 | 290 | 1987 |
| Hybrid-orientation technology (HOT): Opportunities and challenges M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ... IEEE Transactions on Electron Devices 53 (5), 965-978, 2006 | 223 | 2006 |
| Atomic hydrogen reactions with P b centers at the (100) Si/SiO 2 interface JH Stathis, E Cartier Physical review letters 72 (17), 2745, 1994 | 199 | 1994 |
| Photoinduced hydrogen loss from porous silicon RT Collins, MA Tischler, JH Stathis Applied physics letters 61 (14), 1649-1651, 1992 | 171 | 1992 |
| Ultra-thin oxide reliability for ULSI applications EY Wu, JH Stathis, LK Han Semiconductor Science and Technology 15 (5), 425, 2000 | 152 | 2000 |
| Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films DJ DiMaria, JH Stathis Journal of Applied Physics 89 (9), 5015-5024, 2001 | 145 | 2001 |
| Photoinduced paramagnetic defects in amorphous silicon dioxide JH Stathis, MA Kastner Physical Review B 29 (12), 7079, 1984 | 141 | 1984 |
| The impact of gate-oxide breakdown on SRAM stability R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, ... IEEE Electron Device Letters 23 (9), 559-561, 2002 | 137 | 2002 |
| Ultimate limit for defect generation in ultra-thin silicon dioxide DJ DiMaria, JH Stathis Applied physics letters 71 (22), 3230-3232, 1997 | 132 | 1997 |
| Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films DJ DiMaria, JH Stathis Applied Physics Letters 74 (12), 1752-1754, 1999 | 130 | 1999 |
Barry P. LinderResearch Staff Member, IBMVerified email at us.ibm.com
