| Novel applications of photonic band gap materials: Low‐loss bends and high Q cavities RD Meade, A Devenyi, JD Joannopoulos, OL Alerhand, DA Smith, K Kash Journal of applied physics 75 (9), 4753-4755, 1994 | 451 | 1994 |
| Optical spectroscopy of ultrasmall structures etched from quantum wells K Kash, A Scherer, JM Worlock, HG Craighead, MC Tamargo Applied Physics Letters 49 (16), 1043-1045, 1986 | 406 | 1986 |
| Synthesis, lattice structure, and band gap of ZnSnN2 PC Quayle, K He, J Shan, K Kash MRS Communications 3 (3), 135-138, 2013 | 164 | 2013 |
| Optical properties of III–V semiconductor quantum wires and dots K Kash Journal of luminescence 46 (2), 69-82, 1990 | 162 | 1990 |
| Observation of quantum confinement by strain gradients K Kash, BP Van der Gaag, DD Mahoney, AS Gozdz, LT Florez, ... Physical review letters 67 (10), 1326, 1991 | 146 | 1991 |
| Carrier energy relaxation in In0. 53Ga0. 47As determined from picosecond luminescence studies K Kash, J Shah Applied physics letters 45 (4), 401-403, 1984 | 145 | 1984 |
| Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures K Kash, JM Worlock, P Grabbe, JP Harbison, MD Sturge Applied physics letters 53 (9), 782-784, 1988 | 133 | 1988 |
| Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule PC Quayle, EW Blanton, A Punya, GT Junno, K He, L Han, H Zhao, ... physical review B 91 (20), 205207, 2015 | 130 | 2015 |
| Long-lived spatially indirect excitons in coupled GaAs/As quantum wells JE Golub, K Kash, JP Harbison, LT Florez Physical Review B 41 (12), 8564, 1990 | 126 | 1990 |
| Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates E Kapon, K Kash, EM Clausen Jr, DM Hwang, E Colas Applied physics letters 60 (4), 477-479, 1992 | 109 | 1992 |
| Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation K Kash, J Shah, D Block, AC Gossard, W Wiegmann Physica B+ C 134 (1-3), 189-198, 1985 | 109 | 1985 |
| Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources K Du, C Bekele, CC Hayman, JC Angus, P Pirouz, K Kash Journal of Crystal Growth 310 (6), 1057-1061, 2008 | 105 | 2008 |
| Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well K Kash, R Bhat, DD Mahoney, PSD Lin, A Scherer, JM Worlock, ... Applied physics letters 55 (7), 681-683, 1989 | 105 | 1989 |
| Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications R Bhat, MA Koza, K Kash, SJ Allen, WP Hong, SA Schwarz, GK Chang, ... Journal of crystal growth 108 (3-4), 441-448, 1991 | 91 | 1991 |
| Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures K Kash, B Tell, P Grabbe, EA Dobisz, HG Craighead, MC Tamargo Journal of applied physics 63 (1), 190-194, 1988 | 84 | 1988 |
| Electrochemical pinning of the Fermi level: mediation of photoluminescence from gallium nitride and zinc oxide V Chakrapani, C Pendyala, K Kash, AB Anderson, MK Sunkara, JC Angus Journal of the American Chemical Society 130 (39), 12944-12952, 2008 | 79 | 2008 |
| Low pressure synthesis of bulk, polycrystalline gallium nitride A Argoitia, CC Hayman, JC Angus, L Wang, JS Dyck, K Kash Applied Physics Letters 70 (2), 179-181, 1997 | 77 | 1997 |
| Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells L Han, K Kash, H Zhao Journal of Applied Physics 120 (10), 2016 | 65 | 2016 |
| Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems MC Wang, K Kash, CE Zah, R Bhat, SL Chuang Applied physics letters 62 (2), 166-168, 1993 | 65 | 1993 |
| Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces E Colas, E Kapon, S Simhony, HM Cox, R Bhat, K Kash, PSD Lin Applied physics letters 55 (9), 867-869, 1989 | 65 | 1989 |
