Fu Zhang
Fu Zhang
Intel Corporation, PhD, Pennsylvania State University
Verified email at
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Single-atom doping of MoS2 with manganese enables ultrasensitive detection of dopamine: Experimental and computational approach
Y Lei, D Butler, MC Lucking, F Zhang, T Xia, K Fujisawa, ...
Science advances 6 (32), eabc4250, 2020
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ...
Nano letters 18 (2), 1049-1056, 2018
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
MT Fu Zhang, Yanfu Lu, Daniel S Schulman, Tianyi Zhang, Kazunori Fujisawa ...
Science advances 5 (5), eaav5003, 2019
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis
T Zhang, K Fujisawa, F Zhang, M Liu, MC Lucking, RN Gontijo, Y Lei, ...
ACS nano 14 (4), 4326-4335, 2020
Tunable ferromagnetism and thermally induced spin flip in Vanadium‐doped tungsten diselenide monolayers at room temperature
YTH Pham, M Liu, VO Jimenez, Z Yu, V Kalappattil, F Zhang, K Wang, ...
Advanced Materials 32 (45), 2003607, 2020
Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy
TK Patra, F Zhang, DS Schulman, H Chan, MJ Cherukara, M Terrones, ...
ACS nano 12 (8), 8006-8016, 2018
Controlled synthesis of 2D transition metal dichalcogenides: from vertical to planar MoS2
F Zhang, K Momeni, MA AlSaud, A Azizi, MF Hainey, JM Redwing, ...
2D Materials 4 (2), 025029, 2017
Vertically oriented few-layer graphene-nanocup hybrid structured electrodes for high-performance supercapacitors
JL Qi, X Wang, JH Lin, F Zhang, JC Feng, WD Fei
Journal of Materials Chemistry A 3 (23), 12396-12403, 2015
Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide
K Zhang, BM Bersch, F Zhang, NC Briggs, S Subramanian, K Xu, ...
ACS applied materials & interfaces 10 (47), 40831-40837, 2018
Etchant-free transfer of 2D nanostructures
F Zhang, C Erb, L Runkle, X Zhang, N Alem
Nanotechnology 29 (2), 025602, 2017
A high-performance supercapacitor of vertically-oriented few-layered graphene with high-density defects
JL Qi, X Wang, JH Lin, F Zhang, JC Feng, WD Fei
Nanoscale 7 (8), 3675-3682, 2015
Spontaneous chemical functionalization via coordination of Au single atoms on monolayer MoS2
H Liu, D Grasseschi, A Dodda, K Fujisawa, D Olson, E Kahn, F Zhang, ...
Science advances 6 (49), eabc9308, 2020
Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films
X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ...
Journal of Electronic Materials 45, 6273-6279, 2016
Scalable BEOL compatible 2D tungsten diselenide
A Kozhakhmetov, JR Nasr, F Zhang, K Xu, NC Briggs, R Addou, ...
2D Materials 7 (1), 015029, 2019
Modifying the electrochemical performance of vertically-oriented few-layered graphene through rotary plasma processing
J Lin, H Jia, Y Cai, S Chen, H Liang, X Wang, F Zhang, J Qi, J Cao, J Feng, ...
Journal of Materials Chemistry A 6 (3), 908-917, 2018
Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations
T Zhang, K Fujisawa, T Granzier-Nakajima, F Zhang, Z Lin, E Kahn, ...
ACS Applied Nano Materials 2 (8), 5320-5328, 2019
Full orientation control of epitaxial on hBN assisted by substrate defects
F Zhang, Y Wang, C Erb, K Wang, P Moradifar, VH Crespi, N Alem
Physical review B 99 (15), 155430, 2019
Electrochemical polishing of two-dimensional materials
A Sebastian, F Zhang, A Dodda, D May-Rawding, H Liu, T Zhang, ...
ACS nano 13 (1), 78-86, 2018
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