S. Yu. Karpov
S. Yu. Karpov
STR Group - Soft-Impact
Verified email at - Homepage
Cited by
Cited by
Visible Light-Emitting Diodes
SY Karpov
Nitride semiconductor devices: principles and simulation, 303-325, 2007
Suppression of phase separation in InGaN due to elastic strain
SY Karpov
MRS Internet Journal of Nitride Semiconductor Research 3 (1), 16, 1998
Dislocation effect on light emission efficiency in gallium nitride
SY Karpov, YN Makarov
Applied Physics Letters 81 (25), 4721-4723, 2002
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
S Karpov
Optical and Quantum Electronics 47 (6), 1293-1303, 2015
Is Auger recombination responsible for the efficiency rollover in III‐nitride light‐emitting diodes?
KA Bulashevich, SY Karpov
physica status solidi c 5 (6), 2066-2069, 2008
From large‐size to micro‐LEDs: scaling trends revealed by modeling
SS Konoplev, KA Bulashevich, SY Karpov
physica status solidi (a) 215 (10), 1700508, 2018
GaN evaporation in molecular-beam epitaxy environment
N Grandjean, J Massies, F Semond, SY Karpov, RA Talalaev
Applied Physics Letters 74 (13), 1854-1856, 1999
Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes
KA Bulashevich, SY Karpov
physica status solidi (RRL)–Rapid Research Letters 10 (6), 480-484, 2016
Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes
IE Titkov, SY Karpov, A Yadav, VL Zerova, M Zulonas, B Galler, ...
IEEE Journal of Quantum Electronics 50 (11), 911-920, 2014
On mechanisms of sublimation growth of AlN bulk crystals
AS Segal, SY Karpov, YN Makarov, EN Mokhov, AD Roenkov, MG Ramm, ...
Journal of crystal growth 211 (1-4), 68-72, 2000
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
M Selder, L Kadinski, Y Makarov, F Durst, P Wellmann, T Straubinger, ...
Journal of crystal growth 211 (1-4), 333-338, 2000
Simulation of visible and ultra-violet group-III nitride light emitting diodes
KA Bulashevich, VF Mymrin, SY Karpov, IA Zhmakin, AI Zhmakin
Journal of Computational Physics 213 (1), 214-238, 2006
Simulation of sublimation growth of SiC single crystals
SY Karpov, YN Makarov, MS Ramm
physica status solidi (b) 202 (1), 201-220, 1997
Modelling study of MQW LED operation
VF Mymrin, KA Bulashevich, NI Podolskaya, IA Zhmakin, SY Karpov, ...
physica status solidi (c) 2 (7), 2928-2931, 2005
Analysis of sublimation growth of bulk SiC crystals in tantalum container
SY Karpov, AV Kulik, IA Zhmakin, YN Makarov, EN Mokhov, MG Ramm, ...
Journal of crystal growth 211 (1-4), 347-351, 2000
Propagation and transformation of electromagnetic waves in one-dimensional periodic structures
SY Karpov, SN Stolyarov
Physics-Uspekhi 36 (1), 1, 1993
Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling
DA Zakheim, AS Pavluchenko, DA Bauman, KA Bulashevich, ...
physica status solidi (a) 209 (3), 456-460, 2012
Thermodynamic properties of group-III nitrides and related species
IN Przhevalskii, SY Karpov, YN Makarov
Materials Research Society Internet Journal of Nitride Semiconductor …, 1998
Statistical model of ternary group-III nitrides
SY Karpov, NI Podolskaya, IA Zhmakin, AI Zhmakin
Physical Review B 70 (23), 235203, 2004
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