| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 172 | 2011 |
| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 167 | 2009 |
| Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ... Solid-State Electronics 51 (4), 622-626, 2007 | 167 | 2007 |
| Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ... Applied Physics Letters 94 (10), 2009 | 128 | 2009 |
| Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 86 | 2008 |
| Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ... ACS applied materials & interfaces 12 (5), 6022-6029, 2020 | 79 | 2020 |
| In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 2008 | 73 | 2008 |
| An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ... Journal of Applied Physics 114 (14), 2013 | 70 | 2013 |
| Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley Applied Physics Letters 99 (21), 2011 | 66 | 2011 |
| Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ... Institute of Electrical and Electronics Engineers (IEEE), 2012 | 65 | 2012 |
| Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ... Applied Physics Letters 97 (5), 2010 | 65 | 2010 |
| Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ... Journal of the Electrochemical Society 155 (2), G13, 2007 | 64 | 2007 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 57 | 2013 |
| Impact of H2/N2 annealing on interface defect densities in Si (100)/SiO2/HfO2/TiN gate stacks M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ... Microelectronic engineering 80, 70-73, 2005 | 54 | 2005 |
| Traps in undoped semi‐insulating InP obtained by high temperature annealing G Marrakchi, K Cherkaoui, A Karoui, G Hirt, G Müller Journal of applied physics 79 (9), 6947-6950, 1996 | 48 | 1996 |
| Junctionless nanowire transistors for 3d monolithic integration of cmos inverters P Hurley, K Cherkaoui, V Djara US Patent App. 14/782,570, 2016 | 42 | 2016 |
| Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013 | 41 | 2013 |
| Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 41 | 2011 |
| Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation F Gity, K Yeol Byun, KH Lee, K Cherkaoui, JM Hayes, AP Morrison, ... Applied Physics Letters 100 (9), 2012 | 39 | 2012 |
| Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ... Journal of The Electrochemical Society 158 (5), G103, 2011 | 39 | 2011 |
pk hurleyTyndall National Institute, University College CorkVerified email at tyndall.ie
