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Alexander Polyakov
Alexander Polyakov
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Title
Cited by
Cited by
Year
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
3462015
Gallium antimonide device related properties
AG Milnes, AY Polyakov
Solid-state electronics 36 (6), 803-818, 1993
2771993
Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee
Materials Science and Engineering: R: Reports 94, 1-56, 2015
2442015
Lifetime-limiting defects in n− 4H-SiC epilayers
PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 2006
2432006
Review of radiation damage in GaN-based materials and devices
SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 2013
2422013
Electrical characteristics of Au and Ag Schottky contacts on
AY Polyakov, NB Smirnov, EA Kozhukhova, VI Vdovin, K Ip, YW Heo, ...
Applied physics letters 83 (8), 1575-1577, 2003
2372003
Radiation effects in GaN materials and devices
AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
2222013
Radiation damage effects in Ga 2 O 3 materials and devices
J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
2162019
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
1621998
Indium arsenide: a semiconductor for high speed and electro-optical devices
AG Milnes, AY Polyakov
Materials Science and Engineering: B 18 (3), 237-259, 1993
1421993
Surface-plasmon resonance-enhanced multiphoton emission of high-brightness electron beams from a nanostructured copper cathode
RK Li, H To, G Andonian, J Feng, A Polyakov, CM Scoby, K Thompson, ...
Physical review letters 110 (7), 074801, 2013
1322013
Properties of Si donors and persistent photoconductivity in AlGaN
AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
1321998
Reaching the theoretical resonance quality factor limit in coaxial plasmonic nanoresonators fabricated by helium ion lithography
M Melli, A Polyakov, D Gargas, C Huynh, L Scipioni, W Bao, DF Ogletree, ...
Nano Letters 13 (6), 2687-2691, 2013
1252013
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process
M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ...
Journal of Applied Physics 102 (3), 2007
1232007
Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
1212018
Lateral power rectifiers with 9.7 kV reverse breakdown voltage
AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ...
Applied Physics Letters 78 (6), 823-825, 2001
1182001
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
AY Polyakov, NB Smirnov, AS Usikov, AV Govorkov, BV Pushniy
Solid-State Electronics 42 (11), 1959-1967, 1998
1181998
On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy
AY Polyakov, M Shin, JA Freitas, M Skowronski, DW Greve, RG Wilson
Journal of Applied Physics 80 (11), 6349-6354, 1996
1151996
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
AY Polyakov, NB Smirnov, AV Govorkov, M Shin, M Skowronski, ...
Journal of applied physics 84 (2), 870-876, 1998
1101998
Proton implantation effects on electrical and recombination properties of undoped ZnO
AY Polyakov, NB Smirnov, AV Govorkov, EA Kozhukhova, VI Vdovin, K Ip, ...
Journal of applied physics 94 (5), 2895-2900, 2003
1082003
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