| A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ... IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008 | 374 | 2008 |
| Full integration and reliability evaluation of phase-change ram based on 0.24/spl mu/m-cmos technologies YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 348 | 2003 |
| Highly reliable 50nm contact cell technology for 256Mb PRAM SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005 | 335 | 2005 |
| Highly manufacturable high density phase change memory of 64Mb and beyond SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 329 | 2004 |
| Memory device employing NVRAM and flash memory cells BG Jeon, BJ Min, HS Jeong US Patent 7,916,538, 2011 | 308 | 2011 |
| Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 307 | 2006 |
| A 0.1- 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ... IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006 | 251 | 2006 |
| A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM) WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ... IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005 | 246 | 2005 |
| Enhanced write performance of a 64-Mb phase-change random access memory HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ... IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2006 | 149 | 2006 |
| Writing current reduction for high-density phase-change RAM YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ... IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003 | 149 | 2003 |
| Memristor devices for neural networks H Jeong, L Shi Journal of Physics D: Applied Physics 52 (2), 023003, 2018 | 148 | 2018 |
| Full integration and cell characteristics for 64Mb nonvolatile PRAM SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004 | 146 | 2004 |
| Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim Journal of the electrochemical society 154 (3), H139, 2007 | 136 | 2007 |
| Two-bit cell operation in diode-switch phase change memory cells with 90nm technology DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ... 2008 Symposium on VLSI Technology, 98-99, 2008 | 130 | 2008 |
| Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006 | 123 | 2006 |
| Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim Physical Review B 54 (21), 15120, 1996 | 119 | 1996 |
| IEDM Tech. Dig. CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... IEDM Tech. Dig 2, 2006 | 110 | 2006 |
| Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition YK Kim, K Jeong, MH Cho, UK Hwang, HS Jeong, K Kim Applied physics letters 90 (17), 2007 | 96 | 2007 |
| Semiconductor device having multilayer interconnection structure and manufacturing method thereof W Yang, K Kim, HS Jeong US Patent 6,836,019, 2004 | 95 | 2004 |
| Ge nitride formation in N-doped amorphous Ge2Sb2Te5 MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ... Applied Physics Letters 91 (8), 2007 | 90 | 2007 |
Changwook JeongAssociate Professor, Graduate School of Semicondutor Materials and Devices Engineering, UNISTVerified email at unist.ac.kr
