Andreas Waag
Cited by
Cited by
Injection and detection of a spin-polarized current in a light-emitting diode
R Fiederling, M Keim, G Reuscher, W Ossau, G Schmidt, A Waag, ...
Nature 402 (6763), 787-790, 1999
Zinc oxide: from fundamental properties towards novel applications
CF Klingshirn, A Waag, A Hoffmann, J Geurts
Springer Science & Business Media, 2010
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers
M Willander, O Nur, QX Zhao, LL Yang, M Lorenz, BQ Cao, JZ Pérez, ...
Nanotechnology 20 (33), 332001, 2009
GaN based nanorods for solid state lighting
S Li, A Waag
Journal of Applied Physics 111 (7), 2012
ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region
T Gruber, C Kirchner, R Kling, F Reuss, A Waag
Applied physics letters 84 (26), 5359-5361, 2004
Donor–acceptor pair transitions in ZnO substrate material
K Thonke, T Gruber, N Teofilov, R Schönfelder, A Waag, R Sauer
Physica B: Condensed Matter 308, 945-948, 2001
Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures
A Waag, F Fischer, HJ Lugauer, T Litz, J Laubender, U Lunz, U Zehnder, ...
Journal of Applied Physics 80 (2), 792-796, 1996
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs
HS Wasisto, JD Prades, J Gülink, A Waag
Applied Physics Reviews 6 (4), 2019
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ...
Applied physics letters 83 (16), 3290-3292, 2003
Electron and hole g factors measured by spin-flip Raman scattering in CdTe/Cd 1− x Mg x Te single quantum wells
AA Sirenko, T Ruf, M Cardona, DR Yakovlev, W Ossau, A Waag, ...
Physical Review B 56 (4), 2114, 1997
Epitaxial growth and optical transitions of cubic GaN films
D Schikora, M Hankeln, DJ As, K Lischka, T Litz, A Waag, T Buhrow, ...
Physical Review B 54 (12), R8381, 1996
Localized exciton magnetic polarons in Cd 1− x Mn x Te
G Mackh, W Ossau, DR Yakovlev, A Waag, G Landwehr, R Hellmann, ...
Physical Review B 49 (15), 10248, 1994
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ...
Nanotechnology 21 (30), 305201, 2010
Airborne engineered nanoparticle mass sensor based on a silicon resonant cantilever
HS Wasisto, S Merzsch, A Waag, E Uhde, T Salthammer, E Peiner
Sensors and Actuators B: Chemical 180, 77-89, 2013
The nanorod approach: GaN NanoLEDs for solid state lighting
A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ...
physica status solidi c 8 (7‐8), 2296-2301, 2011
Growth of MgTe and Cd1− xMgxTe thin films by molecular beam epitaxy
A Waag, H Heinke, S Scholl, CR Becker, G Landwehr
Journal of crystal growth 131 (3-4), 607-611, 1993
Laser diodes based on beryllium-chalcogenides
A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
Optical investigations on the annealing behavior of gallium-and nitrogen-implanted ZnO
F Reuss, C Kirchner, T Gruber, R Kling, S Maschek, W Limmer, A Waag, ...
Journal of Applied Physics 95 (7), 3385-3390, 2004
Kinetic exchange between the conduction band electrons and magnetic ions in quantum-confined structures
IA Merkulov, DR Yakovlev, A Keller, W Ossau, J Geurts, A Waag, ...
Physical Review Letters 83 (7), 1431, 1999
Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires
T Voss, C Bekeny, L Wischmeier, H Gafsi, S Börner, W Schade, AC Mofor, ...
Applied Physics Letters 89 (18), 2006
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