Electrically driven deep ultraviolet MgZnO lasers at room temperature M Suja, SB Bashar, B Debnath, L Su, W Shi, R Lake, J Liu Scientific reports 7 (1), 2677, 2017 | 41 | 2017 |
Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers H Tian, A Khanaki, P Das, R Zheng, Z Cui, Y He, W Shi, Z Xu, R Lake, ... Nano letters 18 (6), 3352-3361, 2018 | 39 | 2018 |
Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal–insulator–metal devices Z Cui, Y He, H Tian, A Khanaki, L Xu, W Shi, J Liu ACS Applied Electronic Materials 2 (3), 747-755, 2020 | 26 | 2020 |
Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates H Tian, Y He, P Das, Z Cui, W Shi, A Khanaki, RK Lake, J Liu Advanced Materials Interfaces 6 (22), 1901198, 2019 | 25 | 2019 |
Electrically pumped whispering gallery mode lasing from Au/ZnO microwire schottky junction SB Bashar, C Wu, M Suja, H Tian, W Shi, J Liu Advanced Optical Materials 4 (12), 2063-2067, 2016 | 23 | 2016 |
Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications X Huang, L Zhang, L Tong, Z Li, Z Peng, R Lin, W Shi, KH Xue, H Dai, ... Nature Communications 14 (1), 2190, 2023 | 21 | 2023 |
Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode SB Bashar, M Suja, W Shi, J Liu Applied Physics Letters 109 (19), 2016 | 13 | 2016 |
Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth Y He, H Tian, A Khanaki, W Shi, J Tran, Z Cui, P Wei, J Liu Applied Surface Science 498, 143851, 2019 | 11 | 2019 |
Growth of high-quality hexagonal boron nitride single-layer films on carburized Ni substrates for metal–insulator–metal tunneling devices Y He, H Tian, P Das, Z Cui, P Pena, I Chiang, W Shi, L Xu, Y Li, T Yang, ... ACS applied materials & interfaces 12 (31), 35318-35327, 2020 | 10 | 2020 |
Two-dimensional materials-based integrated hardware Z Peng, R Lin, Z Li, L Xu, X Yu, X Huang, W Shi, X He, X Meng, L Tong, ... Science China Information Sciences 66 (6), 160401, 2023 | 9 | 2023 |
On-chip Two-dimensional Materials-based Waveguide-integrated Photodetectors L Ye, X He, Y Wang, Z Peng, Z Li, X Yu, L Xu, X Huang, X Meng, W Shi, ... Journal of Materials Chemistry C, 2024 | 5 | 2024 |
2D van der Waals Vertical Heterojunction Transistors for Ternary Neural Networks Z Li, X Huang, L Xu, Z Peng, X Yu, W Shi, X He, X Meng, D Yang, L Tong, ... Nano Letters 23 (24), 11710-11718, 2023 | 4 | 2023 |
Enhanced and adjustable adsorption of organo-functional groups on Li decorated carbon nanotubes: A first principle study Y Li, X Wang, W Shi, Z Yan, C Zhao, C Chen, L Miao, J Jiang Journal of Applied Physics 116 (8), 2014 | 4 | 2014 |
Manipulating 2D Materials through Strain Engineering X Yu, Z Peng, L Xu, W Shi, Z Li, X Meng, X He, Z Wang, S Duan, L Tong, ... Small, 2402561, 2024 | 3 | 2024 |
Enhanced random lasing from Au-ZnO nanowire Schottky diode by using distributed Bragg reflector SB Bashar, M Suja, W Shi, J Liu 2016 IEEE Photonics Conference (IPC), 532-533, 2016 | 1 | 2016 |
Multifunctional human visual pathway-replicated hardware based on 2D materials Z Peng, L Tong, W Shi, L Xu, X Huang, Z Li, X Yu, X Meng, X He, S Lv, ... Nature Communications 15 (1), 8650, 2024 | | 2024 |
High-Performance Proton Field-Effect Transistor Based on Two-Dimensional Cd Vacancy-Resided Cd0.85PS3Li0.15H0.15 W Shi, X Qian, C Zou, M Zhang, C Huang, X Miao, L Ye ACS nano 18 (34), 22917-22925, 2024 | | 2024 |
Manipulating Exchange Bias in 2D Magnetic Heterojunction for High-performance Robust Memory Applications L Ye, X Huang, L Zhang, L Tong, Z Li, Z Peng, R Lin, KH Xue, H Dai, ... | | 2022 |
Ultrafast synergistic excitation for in-situ computing L Ye, L Tong, Y Bi, Y Wang, X Huang, Z Peng, Z Li, L Xu, R Lin, S Chen, ... | | 2022 |
Zinc Oxide Thin Film Bandgap Engineering and Its Metal-Semiconductor-Metal Random Laser Devices Application W Shi University of California, Riverside, 2018 | | 2018 |