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Andrey Nikolaev
Andrey Nikolaev
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Year
Composition dependence of optical phonon energies and Raman line broadening in hexagonal alloys
VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ...
Physical Review B 65 (12), 125203, 2002
1802002
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
911999
Insulating GaN: Zn layers grown by hydride vapor phase epitaxy on SiC substrates
NI Kuznetsov, AE Nikolaev, AS Zubrilov, YV Melnik, VA Dmitriev
Applied physics letters 75 (20), 3138-3140, 1999
881999
III-V compounds semiconductor device with an AlxByInzGa1-xy-zN non continuous quantum dot layer
AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,479,839, 2002
762002
Properties of free-standing GaN bulk crystals grown by HVPE
Y Melnik, A Nikolaev, I Nikitina, K Vassilevski, V Dmitriev
MRS Online Proceedings Library (OPL) 482, 269, 1997
691997
Hydrogen effects in III-nitride MOVPE
EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ...
Journal of Crystal Growth 310 (23), 4862-4866, 2008
662008
AlN wafers fabricated by hydride vapor phase epitaxy
A Nikolaev, I Nikitina, A Zubrilov, M Mynbaeva, Y Melnik, V Dmitriev
MRS Internet Journal of Nitride Semiconductor Research 5, 432-437, 2000
592000
Fermi level dependence of hydrogen diffusivity in GaN
AY Polyakov, NB Smirnov, SJ Pearton, F Ren, B Theys, F Jomard, ...
Applied Physics Letters 79 (12), 1834-1836, 2001
492001
X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy
VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ...
journal of Applied Physics 115 (7), 2014
482014
Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field
VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ...
Journal of Applied Physics 109 (7), 2011
452011
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
WV Lundin, AE Nikolaev, AV Sakharov, EE Zavarin, GA Valkovskiy, ...
Journal of Crystal Growth 315 (1), 267-271, 2011
442011
Dislocation reduction in AlN and GaN bulk crystals grown by HVPE
M Albrecht, IP Nikitina, AE Nikolaev, YV Melnik, VA Dmitriev, HP Strunk
physica status solidi (a) 176 (1), 453-458, 1999
421999
III-V compound semiconductor device with an AlxByInzGa1-xy-zN1-a-bPaAsb non-continuous quantum dot layer
AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,849,862, 2005
402005
Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,660,083, 2003
402003
High-temperature hardness of bulk single-crystal AlN
I Yonenaga, A Nikolaev, Y Melnik, V Dmitriev
MRS Online Proceedings Library (OPL) 693, I10. 4.1, 2001
402001
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers
WV Lundin, AV Sakharov, EE Zavarin, MA Sinitsyn, AE Nikolaev, ...
Semiconductors 43 (7), 963-967, 2009
382009
Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,706,119, 2004
372004
AlN substrates: fabrication via vapor phase growth and characterization
Y Melnik, V Soukhoveev, V Ivantsov, V Sizov, A Pechnikov, K Tsvetkov, ...
physica status solidi (a) 200 (1), 22-25, 2003
372003
Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC
E Danielsson, CM Zetterling, M Ostling, A Nikolaev, IP Nikitina, V Dmitriev
IEEE Transactions on Electron Devices 48 (3), 444-449, 2001
372001
Method of epitaxially growing submicron group III nitride layers utilizing HVPE
DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,656,272, 2003
362003
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