Joy S. Lee

100

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Jiyoung KimProfessor, Department of Materials Science and Engineering, University of Texas at DallasVerified email at utdallas.edu
Harrison Sejoon KimIntel ATTDVerified email at intel.com
Lanxia ChengStaff Engineer_EMD ElectronicsVerified email at emdgroup.com
Xin MengPhD, Electrical Engineering, The University of Texas at DallasVerified email at utdallas.edu

Joy S. Lee

Materials Science and Engineering Ph.D. Candidate, University of Texas at Dallas

Verified email at utdallas.edu


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Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017	318	2017
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016	140	2016
Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017	16	2017
Inversion behavior of ALD HfZrO2/InGaAs MOS capacitors with in-situ DEZ-H2O treatment JG Lee, YC Byun, D Narayan, AT Lucero, J Kim

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