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Sang-Woo Han
Sang-Woo Han
Other namesSangwoo Han
GaNify LLC
Verified email at ganifyllc.com
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Cited by
Cited by
Year
Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric
HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha
IEEE Electron Device Letters 38 (8), 1090-1093, 2017
552017
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain
JG Lee, SW Han, BR Park, HY Cha
Applied Physics Express 7 (1), 014101, 2013
332013
Design of GaN/AlGaN/GaN super-heterojunction schottky diode
SW Han, J Song, R Chu
IEEE Transactions on Electron Devices 67 (1), 69-74, 2019
302019
Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor
SW Han, JG Lee, CH Cho, HY Cha
Applied Physics Express 7 (11), 111002, 2014
302014
Experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diode capable of 2.8 kV switching
SW Han, J Song, SH Yoo, Z Ma, RM Lavelle, DW Snyder, JM Redwing, ...
IEEE Electron Device Letters 41 (12), 1758-1761, 2020
282020
Comprehensive design guidelines of gate stack for qlc and highly reliable ferroelectric vnand
S Lim, T Kim, I Myeong, S Park, S Noh, SM Lee, J Woo, H Ko, Y Noh, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
242023
12.5 kV GaN super-heterojunction Schottky barrier diodes
SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ...
IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021
202021
Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer
JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha
Semiconductor Science and Technology 30 (8), 085005, 2015
182015
Hydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption
JH Choi, MG Jo, SW Han, H Kim, SH Kim, S Jang, JS Kim, HY Cha
Electronics Letters 53 (17), 1200-1202, 2017
162017
Diode bridge embedded AlGaN/GaN bidirectional switch
BR Park, SW Han, HY Cha
IEEE Electron Device Letters 36 (4), 324-326, 2015
152015
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam
Japanese Journal of Applied Physics 56 (1), 015502, 2016
142016
Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE
SW Han, Y Noh, MG Jo, SH Kim, JE Oh, KS Seo, HY Cha
IEEE Electron Device Letters 37 (12), 1613-1616, 2016
142016
Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes
JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu
IEEE Electron Device Letters 43 (5), 701-704, 2022
122022
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
JT Kemmerling, R Guan, M Sadek, Y Xiong, J Song, SW Han, S Isukapati, ...
IEEE Transactions on Electron Devices, 2024
102024
Study of interface trap density of AlOxNy/GaN MOS structures
J Song, SW Han, H Luo, J Rumsey, JH Leach, R Chu
Applied Physics Letters 119 (12), 2021
102021
AlGaN/GaN metal–oxide–semiconductor heterojunction field-effect transistor integrated with clamp circuit to enable normally-off operation
SW Han, SH Park, JG Lee, J Lim, HY Cha
IEEE Electron Device Letters 36 (6), 540-542, 2015
92015
High-temperature static and dynamic characteristics of 4.2-kV GaN super-heterojunction pn diodes
M Sadek, SW Han, J Song, JC Gallagher, TJ Anderson, R Chu
IEEE Transactions on Electron Devices 69 (4), 1912-1917, 2022
82022
AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster
SW Han, MG Jo, H Kim, CH Cho, HY Cha
Solid-State Electronics 134, 30-38, 2017
82017
Investigation of frequency-dependent permittivity tunability of P (VDF-TrFE) metal-ferroelectric-metal capacitor
SW Han, CH Lee, H Shin, JH Lee, HY Cha
Results in Physics 12, 469-470, 2019
72019
Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
SG Seo, SW Han, HY Cha, S Yang, SH Jin
IEEE Electron Device Letters 40 (1), 107-110, 2018
72018
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