Axel Hoffmann
Axel Hoffmann
Institute of Solid State Physics, Technical University of Berlin
Verified email at - Homepage
Cited by
Cited by
Bound exciton and donor–acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications
CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts
Springer, 2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ...
Physical Review B 56 (16), 10435, 1997
Group III nitride semiconductor compounds: physics and applications
Clarendon Press, 1998
Nitrogen-related local vibrational modes in ZnO: N
A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ...
Applied Physics Letters 80 (11), 1909-1911, 2002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure
H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ...
Applied physics letters 80 (2), 210-212, 2002
Zone-boundary phonons in hexagonal and cubic GaN
H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ...
Physical Review B 55 (11), 7000, 1997
Properties of the yellow luminescence in undoped GaN epitaxial layers
DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ...
Phys. Rev. B 72 (23), 16702, 1995
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ...
Physical Review B 57 (15), 9050, 1998
Development of advanced high heat flux and plasma-facing materials
C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ...
Nuclear Fusion 57 (9), 092007, 2017
Exciton fine structure in undoped GaN epitaxial films
D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ...
Physical Review B 53 (24), 16543, 1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
Semiconductor nanostructures
D Bimberg
Springer, 2008
High Si and Ge n-type doping of GaN doping-Limits and impact on stress
S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ...
Applied Physics Letters 100 (12), 2012
Free excitons in wurtzite GaN
AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ...
Physical Review B 64 (11), 115204, 2001
Existence of a phonon bottleneck for excitons in quantum dots
R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg
Physical review b 64 (24), 241305, 2001
Interrelation of structural and electronic properties in quantum dots using an eight-band model
M Winkelnkemper, A Schliwa, D Bimberg
Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy
H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ...
Solid State Communications 96 (12), 943-949, 1995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix
M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ...
Applied physics letters 72 (8), 942-944, 1998
Optical properties of the nitrogen acceptor in epitaxial ZnO
A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ...
physica status solidi (b) 234 (3), R7-R9, 2002
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