Samuel Keith Gorman
Samuel Keith Gorman
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A two-qubit gate between phosphorus donor electrons in silicon
Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons
Nature 571 (7765), 371-375, 2019
Engineering topological states in atom-based semiconductor quantum dots
M Kiczynski, SK Gorman, H Geng, MB Donnelly, Y Chung, Y He, ...
Nature 606 (7915), 694-699, 2022
Two-electron spin correlations in precision placed donors in silicon
MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, ...
Nature communications 9 (1), 980, 2018
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2003361, 2020
High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon
MA Broome, TF Watson, D Keith, SK Gorman, MG House, JG Keizer, ...
Physical review letters 119 (4), 046802, 2017
Addressable electron spin resonance using donors and donor molecules in silicon
SJ Hile, L Fricke, MG House, E Peretz, CY Chen, Y Wang, M Broome, ...
Science advances 4 (7), eaaq1459, 2018
Benchmarking high fidelity single-shot readout of semiconductor qubits
D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons
New Journal of Physics 21 (6), 063011, 2019
Tunneling statistics for analysis of spin-readout fidelity
SK Gorman, Y He, MG House, JG Keizer, D Keith, L Fricke, SJ Hile, ...
Physical Review Applied 8 (3), 034019, 2017
Impact of nuclear spin dynamics on electron transport through donors
SK Gorman, MA Broome, WJ Baker, MY Simmons
Physical Review B 92 (12), 125413, 2015
Single-shot readout of multiple donor electron spins with a gate-based sensor
MR Hogg, P Pakkiam, SK Gorman, AV Timofeev, Y Chung, GK Gulati, ...
PRX Quantum 4 (1), 010319, 2023
Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon
FN Krauth, SK Gorman, Y He, MT Jones, P Macha, S Kocsis, C Chua, ...
Physical Review Applied 17 (5), 054006, 2022
Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
SK Gorman, MA Broome, JG Keizer, TF Watson, SJ Hile, WJ Baker, ...
New Journal of Physics 18 (5), 053041, 2016
Impact of charge noise on electron exchange interactions in semiconductors
D Keith, SK Gorman, Y He, L Kranz, MY Simmons
npj Quantum Information 8 (1), 17, 2022
The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors
L Kranz, SK Gorman, B Thorgrimsson, S Monir, Y He, D Keith, K Charde, ...
Advanced Materials 35 (6), 2201625, 2023
Ramped measurement technique for robust high-fidelity spin qubit readout
D Keith, Y Chung, L Kranz, B Thorgrimsson, SK Gorman, MY Simmons
Science Advances 8 (36), eabq0455, 2022
Mapping the chemical potential landscape of a triple quantum dot
MA Broome, SK Gorman, JG Keizer, TF Watson, SJ Hile, WJ Baker, ...
Physical Review B 94 (5), 054314, 2016
Hyperfine-mediated spin relaxation in donor-atom qubits in silicon
YL Hsueh, L Kranz, D Keith, S Monir, Y Chung, SK Gorman, R Rahman, ...
Physical Review Research 5 (2), 023043, 2023
Inhomogeneities in YBa2Cu3O7 thin films with reduced thickness
OV Shcherbakova, AV Pan, SK Gorman, SA Fedoseev, IA Golovchanskiy, ...
Physica C: Superconductivity 479, 102-105, 2012
High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon
L Kranz, S Roche, SK Gorman, JG Keizer, MY Simmons
Physical Review Applied 19 (2), 024068, 2023
High-fidelity initialization and control of electron and nuclear spins in a four-qubit register
J Reiner, Y Chung, SH Misha, C Lehner, C Moehle, D Poulos, S Monir, ...
Nature Nanotechnology, 1-7, 2024
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