| Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same DS Kil, J Roh, HC Sohn US Patent App. 10/819,202, 2005 | 512 | 2005 |
| Highly scalable saddle-Fin (S-Fin) transistor for sub-50nm DRAM technology SW Park, SJ Hong, JW Kim, JG Jeong, KD Yoo, SC Moon, HC Sohn, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 32-33, 2006 | 313 | 2006 |
| Evidence for Hole-Driven Conductivity in and Thin Films HL Ju, HC Sohn, KM Krishnan Physical review letters 79 (17), 3230, 1997 | 207 | 1997 |
| Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs M Luysberg, H Sohn, A Prasad, P Specht, Z Liliental-Weber, ER Weber, ... Journal of applied physics 83 (1), 561-566, 1998 | 165 | 1998 |
| Magnetic inhomogeneity and colossal magnetoresistance in manganese oxides HL Ju, H Sohn Journal of magnetism and magnetic materials 167 (3), 200-208, 1997 | 162 | 1997 |
| Adsorptive desulfurization and denitrogenation of refinery fuels using mesoporous silica adsorbents JM Kwon, JH Moon, YS Bae, DG Lee, HC Sohn, CH Lee ChemSusChem: Chemistry & Sustainability Energy & Materials 1 (4), 307-309, 2008 | 129 | 2008 |
| Role of grain boundaries in double exchange manganite oxides La1− xAxMnO3 (A= Ba, Ca) HL Ju, H Sohn Solid state communications 102 (6), 463-466, 1997 | 126 | 1997 |
| J Vac Sci Technol H Kim B 21, 2231, 2003 | 117 | 2003 |
| Electron microscopy characterization of GaN films grown by molecular‐beam epitaxy on sapphire and SiC Z Liliental‐Weber, H Sohn, N Newman, J Washburn Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 106 | 1995 |
| Ga vacancies in low-temperature-grown GaAs identified by slow positrons J Gebauer, R Krause-Rehberg, S Eichler, M Luysberg, H Sohn, ER Weber Applied physics letters 71 (5), 638-640, 1997 | 101 | 1997 |
| Development of new TiN/ZrO2/Al2O3/ZrO2/TiN capacitors extendable to 45nm generation DRAMs replacing HfO2 based dielectrics DS Kil, HS Song, KJ Lee, K Hong, JH Kim, KS Park, SJ Yeom, JS Roh, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 38-39, 2006 | 96 | 2006 |
| Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2 TK Eom, W Sari, KJ Choi, WC Shin, JH Kim, DJ Lee, KB Kim, H Sohn, ... Electrochemical and Solid-State Letters 12 (11), D85, 2009 | 86 | 2009 |
| The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture SH Park, JG Jeong, HJ Kim, SH Park, MH Cho, SW Cho, Y Yi, MY Heo, ... Applied Physics Letters 96 (1), 2010 | 74 | 2010 |
| TEM study on volume changes and void formation in Ge2Sb2Te5 films, with repeated phase changes K Do, D Lee, DH Ko, H Sohn, MH Cho Electrochemical and Solid-State Letters 13 (8), H284, 2010 | 73 | 2010 |
| Phase‐change memory in Bi2Te3 nanowires N Han, SI Kim, JD Yang, K Lee, H Sohn, HM So, CW Ahn, KH Yoo Advanced Materials 23 (16), 1871, 2011 | 68 | 2011 |
| Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films MH Jang, SJ Park, DH Lim, MH Cho, KH Do, DH Ko, HC Sohn Applied physics letters 95 (1), 2009 | 63 | 2009 |
| Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4 SH Kim, ES Hwang, BM Kim, JW Lee, HJ Sun, TE Hong, JK Kim, H Sohn, ... Electrochemical and Solid-State Letters 8 (10), C155, 2005 | 48 | 2005 |
| High current fast switching n-ZnO/p-Si diode Y Choi, K Lee, CH Park, KH Lee, JW Nam, MM Sung, KM Lee, HC Sohn, ... Journal of Physics D: Applied Physics 43 (34), 345101, 2010 | 45 | 2010 |
| A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition SH Kim, N Kwak, J Kim, H Sohn Journal of the Electrochemical Society 153 (10), G887, 2006 | 44 | 2006 |
| A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu SH Kim, HT Kim, SS Yim, DJ Lee, KS Kim, HM Kim, KB Kim, H Sohn Journal of The Electrochemical Society 155 (8), H589, 2008 | 36 | 2008 |
