Dietz Nikolaus

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Ian T. FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State UniversityVerified email at kennesaw.edu
Mustafa AlevliMarmara UniversityVerified email at marmara.edu.tr
A. G. Unil PereraRegent's Professor of Physics, Georgia State UniversityVerified email at gsu.edu
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinVerified email at tu-berlin.de
Matthew KaneAssociate Professor of Marine Engineering and Technology, Texas A&M University (Galveston Campus)Verified email at tamug.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateVerified email at ncsu.edu
Ramon CollazoProfessor of Materials Science and Engineering, NCSUVerified email at ncsu.edu
Ramazan AtalayVerified email at my.centennialcollege.ca
Max BüglerTechnische Universität BerlinVerified email at physik.tu-berlin.de
Ali Kemal OkyayStanford UniversityVerified email at stanford.edu
Sampath GamageUniversity of GeorgiaVerified email at uga.edu
Kazufumi ItoNorth Carolina State UniversityVerified email at math.ncsu.edu
Ronny KirsteResearch associate, NCSUVerified email at ncsu.edu
M. K. I. SenevirathnaAssistant Professor, Center of Excellence for Materials Physics, Department of Physics, CAU, GeorgiaVerified email at cau.edu
V. NarayananIBM T. J. Watson Research CenterVerified email at us.ibm.com
Rudra P BhattaLoudoun County Public School SystemVerified email at lcps.org
Ammar NayfehProfessor in Electrical Engineering Khalifa UniversityVerified email at ku.ac.ae
Raoul SchlesserHexaTech, Inc.Verified email at hexatechinc.com
Farsad Imtiaz ChowdhuryResearch Assistant at University of AlbertaVerified email at ualberta.ca
Sandro CattarinSenior Research Scientist CNR-ICMATE, PadovaVerified email at cnr.it

Dietz Nikolaus

Georgia State University

Verified email at gsu.edu - Homepage

Condensed Matter Physics Group III-V thin film growth Materials diagnostics Optical material characterization


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Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009	167	2009
The growth and optical properties of large, high-quality AlN single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ... Journal of applied physics 96 (10), 5870-5876, 2004	135	2004
GaN∕ AlGaN ultraviolet/infrared dual-band detector G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ... Applied physics letters 89 (9), 2006	98	2006
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar Applied Physics Letters 93 (13), 2008	71	2008
Native defect related optical properties of ZnGeP₂ N Dietz, I Tsveybak, W Ruderman, G Wood, KJ Bachmann Applied physics letters 65 (22), 2759-2761, 1994	71	1994
Sellmeier parameters for and GaP FL Madarasz, JO Dimmock, N Dietz, KJ Bachmann Journal of Applied Physics 87 (3), 1564-1565, 2000	67	2000
Magnetic and optical properties of Ga1− xMnxN grown by metalorganic chemical vapour deposition MH Kane, A Asghar, CR Vestal, M Strassburg, J Senawiratne, ZJ Zhang, ... Semiconductor science and technology 20 (3), L5, 2005	65	2005
Characterization of InN layers grown by high-pressure chemical vapor deposition M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ... Applied physics letters 89 (11), 2006	57	2006
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Acta Materialia 50 (6), 1275-1287, 2002	57	2002
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization V Woods, N Dietz Materials Science and Engineering: B 127 (2-3), 239-250, 2006	52	2006
Stacking faults and twins in gallium phosphide layers grown on silicon V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 82 (4), 685-698, 2002	46	2002
Heteroepitaxy of GaP on Si (100) KJ Bachmann, U Rossow, N Sukidi, H Castleberry, N Dietz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	44	1996
p-Polarized reflectance spectroscopy: a highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions N Dietz, KJ Bachmann Vacuum 47 (2), 133-140, 1996	44	1996
Orientation mediated self-assembled gallium phosphide islands grown on silicon V Narayanan, S Mahajan, N Sukidi, KJ Bachmann, V Woods, N Dietz Philosophical Magazine A 80 (3), 555-572, 2000	43	2000
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation B Tekcan, S Alkis, M Alevli, N Dietz, B Ortaç, N Biyikli, AK Okyay IEEE Electron Device Letters 35 (9), 936-938, 2014	42	2014
Defect identification in semiconductors by Brewster angle spectroscopy HJ Lewerenz, N Dietz Journal of applied physics 73 (10), 4975-4987, 1993	42	1993
The characterization of InN growth under high‐pressure CVD conditions N Dietz, M Alevli, V Woods, M Strassburg, H Kang, IT Ferguson physica status solidi (b) 242 (15), 2985-2994, 2005	38	2005
Real-time optical characterization of thin film growth N Dietz Materials Science and Engineering: B 87 (1), 1-22, 2001	37	2001
Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer N El-Atab, F Cimen, S Alkis, B Ortaç, M Alevli, N Dietz, AK Okyay, ... Applied Physics Letters 104 (25), 2014	33	2014
Correlation of the structural and ferromagnetic properties of Ga1− xMnxN grown by metalorganic chemical vapor deposition MH Kane, M Strassburg, WE Fenwick, A Asghar, AM Payne, S Gupta, ... Journal of crystal growth 287 (2), 591-595, 2006	33	2006

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