Strain engineering for phosphorene: the potential application as a photocatalyst B Sa, YL Li, J Qi, R Ahuja, Z Sun The Journal of Physical Chemistry C 118 (46), 26560-26568, 2014 | 430 | 2014 |
Giant and tunable valley degeneracy splitting in MoTe 2 J Qi, X Li, Q Niu, J Feng Physical Review B 92 (12), 121403, 2015 | 358 | 2015 |
Strain-engineering of band gaps in piezoelectric boron nitride nanoribbons J Qi, X Qian, L Qi, J Feng, D Shi, J Li Nano letters 12 (3), 1224-1228, 2012 | 199 | 2012 |
On the Quantum Spin Hall Gap of Monolayer 1T′‐WTe2 F Zheng, C Cai, S Ge, X Zhang, X Liu, H Lu, Y Zhang, J Qiu, T Taniguchi, ... Advanced Materials, 2016 | 187 | 2016 |
Patterning of graphene J Feng, W Li, X Qian, J Qi, L Qi, J Li Nanoscale 4 (16), 4883-4899, 2012 | 135 | 2012 |
Bandgap engineering of rippled MoS2 monolayer under external electric field J Qi, X Li, X Qian, J Feng Applied Physics Letters 102 (17), 173112, 2013 | 130 | 2013 |
Strain-engineering of magnetic coupling in two-dimensional magnetic semiconductor CrSiTe 3: Competition of direct exchange interaction and superexchange interaction X Chen, J Qi, D Shi Physics Letters A 379 (1), 60-63, 2015 | 92 | 2015 |
The stability and electronic properties of wurtzite and zinc-blende ZnS nanowires H Chen, D Shi, J Qi, J Jia, B Wang Physics Letters A 373 (3), 371-375, 2009 | 82 | 2009 |
The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap JS Qi, JY Huang, J Feng, DN Shi, J Li ACS nano 5 (5), 3475-3482, 2011 | 62 | 2011 |
Gold Microplates with Well‐Defined Shapes C Kan, C Wang, H Li, J Qi, J Zhu, Z Li, D Shi Small 6 (16), 1768-1775, 2010 | 53 | 2010 |
Strain tuning of magnetism in Mn doped MoS2 monolayer J Qi, X Li, X Chen, K Hu Journal of Physics: Condensed Matter 26 (25), 256003, 2014 | 51 | 2014 |
The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene B Sa, YL Li, Z Sun, J Qi, C Wen, B Wu Nanotechnology 26 (21), 215205, 2015 | 48 | 2015 |
Comparative studies on the magnetic properties of ZnS nanowires doped with transition metal atoms H Chen, D Shi, J Qi Journal of Applied Physics 109 (8), 084338, 2011 | 42 | 2011 |
First-principles study on the magnetic properties of transition-metal atoms doped (ZnS) 12 cluster H Chen, D Shi, J Qi, B Wang Journal of Magnetism and Magnetic Materials 323 (6), 781-788, 2011 | 29 | 2011 |
The structures and electronic properties of double-wall bismuth nanotubes from first-principle calculations J Qi, D Shi, X Jiang Chemical Physics Letters 460 (1), 266-271, 2008 | 24 | 2008 |
Different mechanical properties of the pristine and hydrogen passivated ZnO nanowires J Qi, D Shi, B Wang Computational Materials Science 46 (2), 303-306, 2009 | 23 | 2009 |
Stable structures and electronic properties of the oriented Bi Nanowires and Nanotubes from first-principle calculations J Qi, D Shi, J Zhao, X Jiang The Journal of Physical Chemistry C 112 (29), 10745-10753, 2008 | 22 | 2008 |
Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane J Qi, X Li, X Qian Applied Physics Letters 108 (25), 253107, 2016 | 18 | 2016 |
Structure, electronic and magnetic properties of Cr-doped (ZnS) 12 clusters: A first-principles study H Chen, D Shi, J Qi, B Wang Physics Letters A 374 (40), 4133-4139, 2010 | 18 | 2010 |
Electronic and mechanical properties of ZnS nanowires with different surface adsorptions H Chen, D Shi, J Qi, B Wang Physica E: Low-dimensional Systems and Nanostructures 42 (1), 32-37, 2009 | 17 | 2009 |