Marco M. Furchi'
Marco M. Furchi'
PostDoc, TU Wien
Verified email at
Cited by
Cited by
Solar-energy conversion and light emission in an atomic monolayer p–n diode
A Pospischil, MM Furchi, T Mueller
Nature nanotechnology 9 (4), 257-261, 2014
Photovoltaic effect in an electrically tunable van der Waals heterojunction
MM Furchi, A Pospischil, F Libisch, J Burgdorfer, T Mueller
Nano letters 14 (8), 4785-4791, 2014
Microcavity-integrated graphene photodetector
M Furchi, A Urich, A Pospischil, G Lilley, K Unterrainer, H Detz, P Klang, ...
Nano letters 12 (6), 2773-2777, 2012
CMOS-compatible graphene photodetector covering all optical communication bands
A Pospischil, M Humer, MM Furchi, D Bachmann, R Guider, T Fromherz, ...
Nature Photonics 7 (11), 892-896, 2013
Mechanisms of Photoconductivity in Atomically Thin MoS2
MM Furchi, DK Polyushkin, A Pospischil, T Mueller
Nano letters 14 (11), 6165-6170, 2014
Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride
G Grosso, H Moon, B Lienhard, S Ali, DK Efetov, MM Furchi, ...
Nature communications 8 (1), 705, 2017
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
YQ Bie, G Grosso, M Heuck, MM Furchi, Y Cao, J Zheng, D Bunandar, ...
Nature nanotechnology 12 (12), 1124-1129, 2017
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
Optical imaging of strain in two-dimensional crystals
L Mennel, MM Furchi, S Wachter, M Paur, DK Polyushkin, T Mueller
Nature communications 9 (1), 516, 2018
Device physics of van der Waals heterojunction solar cells
MM Furchi, F Höller, L Dobusch, DK Polyushkin, S Schuler, T Mueller
npj 2D Materials and Applications 2 (1), 3, 2018
Photovoltaics in Van der Waals heterostructures
MM Furchi, AA Zechmeister, F Hoeller, S Wachter, A Pospischil, T Mueller
IEEE Journal of Selected Topics in Quantum Electronics 23 (1), 106-116, 2016
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
Silver nanoisland enhanced Raman interaction in graphene
A Urich, A Pospischil, MM Furchi, D Dietze, K Unterrainer, T Mueller
Applied Physics Letters 101 (15), 2012
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
Electric field modulation of thermovoltage in single-layer MoS2
L Dobusch, MM Furchi, A Pospischil, T Mueller, E Bertagnolli, A Lugstein
Applied Physics Letters 105 (25), 2014
Reliability of next-generation field-effect transistors with transition metal dichalcogenides
YY Illarionov, AJ Molina-Mendoza, M Waltl, T Knobloch, MM Furchi, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 5A. 5-1-5A. 5-6, 2018
Impact of gate dielectrics on the threshold voltage in MoS2 transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, D Polyushkin, A Pospischil, ...
ECS Transactions 80 (1), 203, 2017
2D materials and heterostructures for applications in optoelectronics
T Mueller, A Pospischil, MM Furchi
Micro-and Nanotechnology Sensors, Systems, and Applications VII 9467, 163-168, 2015
Physical modeling of the hysteresis in M0S2 transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, M Jech, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 284-287, 2017
Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators
YY Illarionov, M Waltl, MM Furchi, T Mueller, T Grasser
2016 IEEE International Reliability Physics Symposium (IRPS), 5A-1-1-5A-1-6, 2016
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