| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 235 | 2014 |
| Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012 | 161 | 2012 |
| Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ... Applied Physics Letters 97 (4), 2010 | 152 | 2010 |
| Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide C Gong, HC Floresca, D Hinojos, S McDonnell, X Qin, Y Hao, ... The Journal of Physical Chemistry C 117 (44), 23000-23008, 2013 | 133 | 2013 |
| Partially fluorinated graphene: structural and electrical characterization L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ... ACS Applied Materials & Interfaces 8 (7), 5002-5008, 2016 | 103 | 2016 |
| Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ... The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013 | 78 | 2013 |
| Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ... Carbon 68, 791-797, 2014 | 29 | 2014 |
| Scaling of HfO2 dielectric on CVD graphene S McDonnell, A Azcatl, G Mordi, C Floresca, A Pirkle, L Colombo, J Kim, ... Applied Surface Science 294, 95-99, 2014 | 26 | 2014 |
| Graphene-ferroelectric hybrid devices for multi-valued memory system S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ... Applied Physics Letters 103 (2), 2013 | 21 | 2013 |
| Low-κ organic layer as a top gate dielectric for graphene field effect transistors G Mordi, S Jandhyala, C Floresca, S McDonnell, MJ Kim, RM Wallace, ... Applied Physics Letters 100 (19), 2012 | 19 | 2012 |
| Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices B Lee, G Mordi, T Park, L Goux, YJ Chabal, K Cho, EM Vogel, M Kim, ... ECS Transactions 19 (5), 225, 2009 | 19 | 2009 |
| In situ electrical studies of ozone based atomic layer deposition on graphene S Jandhyala, G Mordi, B Lee, J Kim ECS Transactions 45 (4), 39, 2012 | 8 | 2012 |
| Triangular-pulse measurement for hysteresis of high-performance and flexible graphene field-effect transistors S Park, S Lee, G Mordi, S Jandhyala, MW Ha, JS Lee, L Colombo, ... IEEE Electron Device Letters 35 (2), 277-279, 2014 | 5 | 2014 |
| Atomically-precise three-dimensional top down fabrication JB Ballard, JHG Owen, E Fuchs, S McDonnell, D Dick, G Mordi, A Azcatl, ... 2013 Transducers & Eurosensors XXVII: The 17th International Conference on …, 2013 | 3 | 2013 |
| Patterned Atomic Layer Deposition on Scanning Tunneling Microscope constructed templates A Azcatl, J Ballard, Y Chabal, KJ Cho, D Dick, J Owen, R Longo, ... Nanotechnology, 481-484, 2013 | 1 | 2013 |
| Atomic layer deposited Al2O3 dielectrics using ozone functionalization of graphene S Jandhyala, G Mordi, B Lee, J Kim 2011 IEEE Nanotechnology Materials and Devices Conference, 94-97, 2011 | 1 | 2011 |
| In Situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene J Kim, S Jandhyala, G Mordi, B Lee ECS Meeting Abstracts, 758, 2012 | | 2012 |
| Implementation of Parylene as a Low- Kappa Gate Dielectric Material for Graphene Field Effect Transistors(GFETs) G Mordi, S Jandhyala, J Kim AIP Conference Proceedings, 2012 | | 2012 |
| Scaling Down High- Kappa Gate Dielectrics for Graphene-Based Device Applications S Jandhyala, G Mordi, J Kim AIP Conference Proceedings, 2012 | | 2012 |
| In-Situ Electrical Studies on Ozone Functionalization of Graphene S Jandhyala, G Mordi, J Kim AIP Conference Proceedings, 2012 | | 2012 |
