yuri makarov
yuri makarov
Nitride Crystals Inc.
Verified email at - Homepage
Cited by
Cited by
Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
Y Makarov, M Spencer
US Patent 8,329,252, 2012
Dislocation effect on light emission efficiency in gallium nitride
SY Karpov, YN Makarov
Applied Physics Letters 81 (25), 4721-4723, 2002
On the sublimation growth of SiC bulk crystals: development of a numerical process model
D Hofmann, M Heinze, A Winnacker, F Durst, L Kadinski, P Kaufmann, ...
Journal of crystal growth 146 (1-4), 214-219, 1995
Elastic and piezoelectric properties of AlN and LiAlO2 single crystals
AV Sotnikov, H Schmidt, M Weihnacht, EP Smirnova, TY Chemekova, ...
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 57 …, 2010
SiC-bulk growth by physical-vapor transport and its global modelling
D Hofmann, R Eckstein, M Kölbl, Y Makarov, M St G, E Schmitt, ...
Journal of crystal growth 174 (1-4), 669-674, 1997
Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas
AS Segal, AN Vorob'ev, SY Karpov, EN Mokhov, MG Ramm, MS Ramm, ...
Journal of crystal growth 208 (1-4), 431-441, 2000
Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container
YE Egorov, AO Galyukov, SG Gurevich, Y Makarov, EN Mokhov, ...
Materials Science Forum 264, 61-64, 1997
Graphene on SiC substrate as biosensor: Theoretical background, preparation, and characterization
AA Lebedev, SY Davydov, IA Eliseyev, AD Roenkov, O Avdeev, ...
Materials 14 (3), 590, 2021
Application of magnetic fields in industrial growth of silicon single crystals
W Von Ammon, Y Gelfgat, L Gorbunov, A Muhlbauer, A Muiznieks, ...
Gelfgat, L. Gorbunov, A. Mühlbauer, A. Muiznieks, Y. Makarov, J. Virbulis, G …, 2005
Characterization of HVPE‐grown UV LED heterostructures
S Kurin, A Antipov, I Barash, A Roenkov, A Usikov, H Helava, V Ratnikov, ...
Physica status solidi (C) 11 (3‐4), 813-816, 2014
CHVPE growth of AlGaN‐based UV LEDs
S Kurin, A Antipov, I Barash, A Roenkov, H Helava, S Tarasov, ...
physica status solidi c 10 (3), 289-293, 2013
AlN substrates and epitaxy results
H Helava, T Chemekova, O Avdeev, E Mokhov, S Nagalyuk, Y Makarov, ...
physica status solidi c 7 (7‐8), 2115-2117, 2010
In situ visualization of SiC physical vapor transport crystal growth
P Wellmann, Z Herro, A Winnacker, R Püsche, M Hundhausen, P Masri, ...
Journal of Crystal Growth 275 (1-2), e1807-e1812, 2005
On the peculiarities of the short-time (tg< 10 ms) solid solution LPE growth onto the moving substrate
DZ Garbuzov, EV Zhuravkevich, AI Zhmakin, YN Makarov, ...
Journal of crystal growth 110 (4), 955-959, 1991
Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source
JG Kim, EJ Jung, Y Kim, Y Makarov, DJ Choi
Ceramics International 40 (3), 3953-3959, 2014
Thermal-diffusion synthesis of thick molybdenum disulphide coatings on steel substrates
S Voronin, O Smorygo, P Bertrand, I Smurov, N Smirnov, Y Makarov
Surface and Coatings Technology 180, 113-117, 2004
Mass transport and powder source evolution in sublimation growth of SiC bulk crystals
DS Karpov, OV Bord, SY Karpov, AI Zhmakin, MS Ramm, YN Makarov
Materials Science Forum 353, 37-40, 2001
Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique
P Konkapaka, B Raghothamachar, M Dudley, Y Makarov, MG Spencer
Journal of crystal growth 289 (1), 140-144, 2006
Modeling of facet formation in SiC bulk crystal growth
ID Matukov, DS Kalinin, MV Bogdanov, SY Karpov, DK Ofengeim, ...
Journal of crystal growth 266 (1-3), 313-319, 2004
Growth of low-defect SiC and AlN crystals in refractory metal crucibles
HI Helava, EN Mokhov, OA Avdeev, MG Ramm, DP Litvin, AV Vasiliev, ...
Materials Science Forum 740, 85-90, 2013
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