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Dongjea Seo
Dongjea Seo
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Year
Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
X Cui, EM Shih, LA Jauregui, SH Chae, YD Kim, B Li, D Seo, K Pistunova, ...
Nano letters 17 (8), 4781-4786, 2017
3102017
Ultrafast graphene light emitters
YD Kim, Y Gao, RJ Shiue, L Wang, B Aslan, MH Bae, H Kim, D Seo, ...
Nano letters 18 (2), 934-940, 2018
1392018
Thermal conductivity of VLS-grown rough Si nanowires with various surface roughnesses and diameters
YH Park, J Kim, H Kim, I Kim, KY Lee, D Seo, HJ Choi, W Kim
Applied Physics A 104, 7-14, 2011
672011
Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions
SW Kim, J Lee, JH Sung, D Seo, I Kim, MH Jo, BW Kwon, WK Choi, ...
ACS nano 8 (7), 6556-6562, 2014
612014
Electrostatic Screening of Charged Defects in Monolayer MoS2
TL Atallah, J Wang, M Bosch, D Seo, RA Burke, O Moneer, J Zhu, ...
The journal of physical chemistry letters 8 (10), 2148-2152, 2017
552017
High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact
D Seo, DY Lee, J Kwon, JJ Lee, T Taniguchi, K Watanabe, GH Lee, ...
Applied Physics Letters 115 (1), 2019
472019
Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition
TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ...
Applied Physics Letters 107 (22), 2015
282015
Growth of silicon nanosheets under diffusion-limited aggregation environments
J Lee, SW Kim, I Kim, D Seo, HJ Choi
Nanoscale research letters 10, 1-6, 2015
232015
Graphene-based plasmonic waveguide devices for electronic-photonic integrated circuit
JT Kim, JH Choe, JS Kim, D Seo, YD Kim, KH Chung
Optics & Laser Technology 106, 76-86, 2018
222018
Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure
J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ...
Advanced Materials 32 (43), 2003567, 2020
172020
Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting
S Lee, D Seo, SH Park, N Izquierdo, EH Lee, R Younas, G Zhou, M Palei, ...
Nature communications 14 (1), 3889, 2023
142023
Large-Scale Self-Limiting Synthesis of Monolayer MoS2 via Proximity Evaporation from Mo Films
HJ Choi, YS Jung, SM Lee, S Kang, D Seo, H Kim, HJ Choi, GH Lee, ...
Crystal Growth & Design 20 (4), 2698-2705, 2020
142020
Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts
D Seo, J Lee, SW Kim, I Kim, J Na, MH Hong, HJ Choi
Nanoscale Research Letters 10, 1-7, 2015
112015
Extension of the T-bridge method for measuring the thermal conductivity of two-dimensional materials
J Kim, DJ Seo, H Park, H Kim, HJ Choi, W Kim
Review of Scientific Instruments 88 (5), 2017
92017
Phosphorus doping of Si nanosheets by spin-on dopant proximity
JM Yang, J Lee, TE Park, D Seo, JM Park, S Park, J Na, J Kwon, HJ Lee, ...
Electronic Materials Letters 15, 208-215, 2019
72019
Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation
X Hua, D Zhang, B Kim, D Seo, K Kang, EH Yang, J Hu, X Chen, H Liang, ...
ACS applied materials & interfaces 13 (26), 31271-31278, 2021
52021
Magnetic In x Ga1 - xN nanowires at room temperature using Cu dopant and annealing
YH Park, R Ha, TE Park, SW Kim, D Seo, HJ Choi
Nanoscale Research Letters 10, 1-5, 2015
52015
Topography dependence of conductivity in electrostrictive germanium sulfide nanoribbons
Z Chen, AT Hoang, D Seo, M Cho, YD Kim, L Yang, JH Ahn, HJ Choi
2D Materials 9 (4), 045008, 2022
42022
Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy
Z Chen, AT Hoang, W Hwang, D Seo, M Cho, YD Kim, L Yang, A Soon, ...
Nano letters 22 (18), 7636-7643, 2022
32022
Plasma-Doped Si Nanosheets for Transistor and p–n Junction Application
J Lee, J Kwon, D Seo, J Na, S Park, HJ Lee, SW Lee, KY Lee, TE Park, ...
ACS applied materials & interfaces 11 (45), 42512-42519, 2019
22019
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