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Joan Redwing
Joan Redwing
Verified email at psu.edu
Title
Cited by
Cited by
Year
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
6692016
In situ epitaxial MgB2 thin films for superconducting electronics
X Zeng, AV Pogrebnyakov, A Kotcharov, JE Jones, XX Xi, EM Lysczek, ...
Nature materials 1 (1), 35-38, 2002
4742002
Piezoelectric charge densities in AlGaN/GaN HFETs
PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
4291997
Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
4192015
Bottom-up assembly of large-area nanowire resonator arrays
M Li, RB Bhiladvala, TJ Morrow, JA Sioss, KK Lew, JM Redwing, ...
Nature Nanotechnology 3 (2), 88-92, 2008
3862008
GaN-based devices using (Ga, AL, In) N base layers
RP Vaudo, JM Redwing, MA Tischler, DW Brown
US Patent 6,156,581, 2000
3402000
High-field superconductivity in alloyed thin films
V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B 71 (1), 012504, 2005
3262005
Crystallographic wet chemical etching of GaN
DA Stocker, EF Schubert, JM Redwing
Applied Physics Letters 73 (18), 2654-2656, 1998
3221998
High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
J Redwing, MA Tischler
US Patent 5,874,747, 1999
2931999
Silicon nanowire array photoelectrochemical cells
AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
2772007
III-V nitride substrate boule and method of making and using the same
RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler
US Patent 6,596,079, 2003
2642003
Benchmarking monolayer MoS2 and WS2 field-effect transistors
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature communications 12 (1), 693, 2021
2622021
Optical properties of Si-doped GaN
EF Schubert, ID Goepfert, W Grieshaber, JM Redwing
Applied Physics Letters 71 (7), 921-923, 1997
2621997
Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates
KK Lew, JM Redwing
Journal of Crystal Growth 254 (1-2), 14-22, 2003
2592003
AIGaN/GaN HEMTs grown on SIC substrates
SC Binari, JM Redwing, G Keiner, W Kruppa
Electronics Letters 33 (3), 242-243, 1997
2311997
Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ...
Nano letters 18 (2), 1049-1056, 2018
2252018
Optical properties of rectangular cross-sectional ZnS nanowires
Q Xiong, G Chen, JD Acord, X Liu, JJ Zengel, HR Gutierrez, JM Redwing, ...
Nano Letters 4 (9), 1663-1668, 2004
2252004
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
2232019
High voltage (450 V) GaN schottky rectifiers
ZZ Bandić, PM Bridger, EC Piquette, TC McGill, RP Vaudo, VM Phanse, ...
Applied physics letters 74 (9), 1266-1268, 1999
2221999
The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
2201998
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Articles 1–20